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Title: Mechanical and electronic properties of strained Ge nanowires using ab initio real-space pseudopotentials

Authors:
; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1103409
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 86; Journal Issue: 11; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Lee, Alex J., Kim, Minjung, Lena, Charles, and Chelikowsky, James R.. Mechanical and electronic properties of strained Ge nanowires using ab initio real-space pseudopotentials. United States: N. p., 2012. Web. doi:10.1103/PhysRevB.86.115331.
Lee, Alex J., Kim, Minjung, Lena, Charles, & Chelikowsky, James R.. Mechanical and electronic properties of strained Ge nanowires using ab initio real-space pseudopotentials. United States. doi:10.1103/PhysRevB.86.115331.
Lee, Alex J., Kim, Minjung, Lena, Charles, and Chelikowsky, James R.. Thu . "Mechanical and electronic properties of strained Ge nanowires using ab initio real-space pseudopotentials". United States. doi:10.1103/PhysRevB.86.115331.
@article{osti_1103409,
title = {Mechanical and electronic properties of strained Ge nanowires using ab initio real-space pseudopotentials},
author = {Lee, Alex J. and Kim, Minjung and Lena, Charles and Chelikowsky, James R.},
abstractNote = {},
doi = {10.1103/PhysRevB.86.115331},
journal = {Physical Review B},
issn = {1098-0121},
number = 11,
volume = 86,
place = {United States},
year = {2012},
month = {9}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevB.86.115331

Citation Metrics:
Cited by: 10 works
Citation information provided by
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