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Title: Ab initio Calculations of Deep-Level Carrier Nonradiative Recombination Rates in Bulk Semiconductors

Authors:
;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1102500
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Name: Physical Review Letters Journal Volume: 109 Journal Issue: 24; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Shi, Lin, and Wang, Lin-Wang. Ab initio Calculations of Deep-Level Carrier Nonradiative Recombination Rates in Bulk Semiconductors. United States: N. p., 2012. Web. doi:10.1103/PhysRevLett.109.245501.
Shi, Lin, & Wang, Lin-Wang. Ab initio Calculations of Deep-Level Carrier Nonradiative Recombination Rates in Bulk Semiconductors. United States. doi:10.1103/PhysRevLett.109.245501.
Shi, Lin, and Wang, Lin-Wang. Mon . "Ab initio Calculations of Deep-Level Carrier Nonradiative Recombination Rates in Bulk Semiconductors". United States. doi:10.1103/PhysRevLett.109.245501.
@article{osti_1102500,
title = {Ab initio Calculations of Deep-Level Carrier Nonradiative Recombination Rates in Bulk Semiconductors},
author = {Shi, Lin and Wang, Lin-Wang},
abstractNote = {},
doi = {10.1103/PhysRevLett.109.245501},
journal = {Physical Review Letters},
issn = {0031-9007},
number = 24,
volume = 109,
place = {United States},
year = {2012},
month = {12}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevLett.109.245501

Citation Metrics:
Cited by: 21 works
Citation information provided by
Web of Science

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Works referenced in this record:

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996


Ab initio molecular-dynamics simulation of the liquid-metal–amorphous-semiconductor transition in germanium
journal, May 1994


Ab initiomolecular dynamics for liquid metals
journal, January 1993