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Title: Comparative study of the luminescence and intrinsic point defects in the kesterite Cu2ZnSnS4 and chalcopyrite Cu(In,Ga)Se2 thin films used in photovoltaic applications

Journal Article · · Physical Review. B, Condensed Matter and Materials Physics

Sponsoring Organization:
USDOE
OSTI ID:
1101024
Journal Information:
Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Vol. 84 Journal Issue: 16; ISSN 1098-0121
Publisher:
American Physical SocietyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 192 works
Citation information provided by
Web of Science

References (24)

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First-principles calculation of defect formation energy in chalcopyrite-type CuInSe2, CuGaSe2 and CuAlSe2 journal November 2005
Materials availability for large-scale thin-film photovoltaics journal January 2000
Defect physics of the CuInSe 2 chalcopyrite semiconductor journal April 1998
Stabilization of Ternary Compounds via Ordered Arrays of Defect Pairs journal May 1997
Cathodoluminescence of Cu(In,Ga)Se2 thin films used in high-efficiency solar cells journal December 2003
Electronic Properties of Doped Semiconductors book January 1984
Thermally evaporated Cu2ZnSnS4 solar cells journal October 2010
Local built-in potential on grain boundary of Cu(In,Ga)Se2 thin films journal May 2004
New world record efficiency for Cu(In,Ga)Se2 thin-film solar cells beyond 20% journal January 2011
Characterization of CuIn(Ga)Se2 Thin Films journal July 1998
Anomalous Grain Boundary Physics in Polycrystalline C u I n S e 2 : The Existence of a Hole Barrier journal December 2003
The Role of Spatial Potential Fluctuations in the Shape of the PL Bands of Multinary Semiconductor Compounds journal January 1999
The electronic consequences of multivalent elements in inorganic solar absorbers: Multivalency of Sn in Cu2ZnSnS4 journal May 2010
Excitonic luminescence of Cu(In,Ga)Se2 journal June 2005
Compositionally induced valence-band offset at the grain boundary of polycrystalline chalcopyrites creates a hole barrier journal November 2005
Contents: (Adv. Mater. 8/2010) journal February 2010
Large Neutral Barrier at Grain Boundaries in Chalcopyrite Thin Films journal May 2010
Intrinsic point defects and complexes in the quaternary kesterite semiconductor Cu 2 ZnSnS 4 journal June 2010
Effects of Ga addition to CuInSe2 on its electronic, structural, and defect properties journal June 1998
Material considerations for terawatt level deployment of photovoltaics journal February 2008
Defect formation and phase stability of Cu 2 ZnSnS 4 photovoltaic material journal March 2010
Characterization of Cu(In,Ga)Se2 materials used in record performance solar cells journal July 2006
Lateral electron transport in Cu(In,Ga)Se2 investigated by electro-assisted scanning tunneling microscopy journal October 2005