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Title: Real-Time Measurement of Stress and Damage Evolution during Initial Lithiation of Crystalline Silicon

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1100361
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 4; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Chon, M. J., Sethuraman, V. A., McCormick, A., Srinivasan, V., and Guduru, P. R.. Real-Time Measurement of Stress and Damage Evolution during Initial Lithiation of Crystalline Silicon. United States: N. p., 2011. Web. doi:10.1103/PhysRevLett.107.045503.
Chon, M. J., Sethuraman, V. A., McCormick, A., Srinivasan, V., & Guduru, P. R.. Real-Time Measurement of Stress and Damage Evolution during Initial Lithiation of Crystalline Silicon. United States. doi:10.1103/PhysRevLett.107.045503.
Chon, M. J., Sethuraman, V. A., McCormick, A., Srinivasan, V., and Guduru, P. R.. Thu . "Real-Time Measurement of Stress and Damage Evolution during Initial Lithiation of Crystalline Silicon". United States. doi:10.1103/PhysRevLett.107.045503.
@article{osti_1100361,
title = {Real-Time Measurement of Stress and Damage Evolution during Initial Lithiation of Crystalline Silicon},
author = {Chon, M. J. and Sethuraman, V. A. and McCormick, A. and Srinivasan, V. and Guduru, P. R.},
abstractNote = {},
doi = {10.1103/PhysRevLett.107.045503},
journal = {Physical Review Letters},
issn = {0031-9007},
number = 4,
volume = 107,
place = {United States},
year = {2011},
month = {7}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevLett.107.045503

Citation Metrics:
Cited by: 158 works
Citation information provided by
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