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Title: Field-effect mobility enhanced by tuning the Fermi level into the band gap of Bi 2Se 3

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1098904
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review. B. Condensed Matter and Materials Physics
Additional Journal Information:
Journal Name: Physical Review. B. Condensed Matter and Materials Physics Journal Volume: 85 Journal Issue: 20; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Wei, Peng, Wang, Zhiyong, Liu, Xinfei, Aji, Vivek, and Shi, Jing. Field-effect mobility enhanced by tuning the Fermi level into the band gap of Bi2Se3. United States: N. p., 2012. Web. doi:10.1103/PhysRevB.85.201402.
Wei, Peng, Wang, Zhiyong, Liu, Xinfei, Aji, Vivek, & Shi, Jing. Field-effect mobility enhanced by tuning the Fermi level into the band gap of Bi2Se3. United States. doi:10.1103/PhysRevB.85.201402.
Wei, Peng, Wang, Zhiyong, Liu, Xinfei, Aji, Vivek, and Shi, Jing. Wed . "Field-effect mobility enhanced by tuning the Fermi level into the band gap of Bi2Se3". United States. doi:10.1103/PhysRevB.85.201402.
@article{osti_1098904,
title = {Field-effect mobility enhanced by tuning the Fermi level into the band gap of Bi2Se3},
author = {Wei, Peng and Wang, Zhiyong and Liu, Xinfei and Aji, Vivek and Shi, Jing},
abstractNote = {},
doi = {10.1103/PhysRevB.85.201402},
journal = {Physical Review. B. Condensed Matter and Materials Physics},
issn = {1098-0121},
number = 20,
volume = 85,
place = {United States},
year = {2012},
month = {5}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevB.85.201402

Citation Metrics:
Cited by: 16 works
Citation information provided by
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Works referenced in this record:

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