A high-k ferroelectric relaxor terpolymer as a gate dielectric for orgnaic thin film transistors

Journal Article · Tue Jan 01 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4773186· OSTI ID:1095670

Wu, Shan ^[1]; Shao, Ming ^[2]; Burlingame, Quinn ^[1]; Chen, Xiangzhong ^[3]; Lin, Minren ^[1]; Xiao, Kai ^[2]; Zhang, Qiming ^[1]

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1. Pennsylvania State University
2. ORNL
3. Penn state university

Poly(vinylidenefluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF-TrFE-CFE)) is a ferroelectric terpolymer relaxor with a static dielectric constant of 50, which was developed using defect modification to eliminate remnant polarization in the normal ferroelectric PVDF. In this work, this solution processable terpolymer was used as the gate insulator in bottom gated organic thin-film transistors with a pentacene semiconductor layer. Due to the high dielectric constant of P(VDF-TrFE- CFE), a large capacitive coupling between the gate and channel can be achieved which causes a high charge concentration at the interface of the semiconductor and dielectric layers. In this device, an on/ off ratio of 104 and a low minimum operation gate voltage (5-10 V) were attained

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: DE-AC05-00OR22725
• OSTI ID: 1095670
• Journal Information: Applied Physics Letters, Vol. 102, Issue 1; ISSN 0003-6951
• Country of Publication: United States
• Language: English