skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Bi-Se doped with Cu, p-type semiconductor

Abstract

A Bi--Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred embodiment, the semiconductor comprises at least 28 molar percent of Cu. In one embodiment, the semiconductor comprises a molar percentage of Cu and Bi whereby the molar percentage of Cu divided by the molar percentage of Bi is greater than 1.2. In a preferred embodiment, the semiconductor is manufactured as a thin film having a thickness less than 600 nm.

Inventors:
; ;
Publication Date:
Research Org.:
U.S. Department of Energy (Washington, DC)
Sponsoring Org.:
USDOE
OSTI Identifier:
1093242
Patent Number(s):
8,513,050
Application Number:
12/815,585
Assignee:
U.S. Department of Energy (Washington, DC)
DOE Contract Number:  
AC36-98G010337
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Bhattacharya, Raghu Nath, Phok, Sovannary, and Parilla, Philip Anthony. Bi-Se doped with Cu, p-type semiconductor. United States: N. p., 2013. Web.
Bhattacharya, Raghu Nath, Phok, Sovannary, & Parilla, Philip Anthony. Bi-Se doped with Cu, p-type semiconductor. United States.
Bhattacharya, Raghu Nath, Phok, Sovannary, and Parilla, Philip Anthony. Tue . "Bi-Se doped with Cu, p-type semiconductor". United States. https://www.osti.gov/servlets/purl/1093242.
@article{osti_1093242,
title = {Bi-Se doped with Cu, p-type semiconductor},
author = {Bhattacharya, Raghu Nath and Phok, Sovannary and Parilla, Philip Anthony},
abstractNote = {A Bi--Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred embodiment, the semiconductor comprises at least 28 molar percent of Cu. In one embodiment, the semiconductor comprises a molar percentage of Cu and Bi whereby the molar percentage of Cu divided by the molar percentage of Bi is greater than 1.2. In a preferred embodiment, the semiconductor is manufactured as a thin film having a thickness less than 600 nm.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {8}
}

Patent:

Save / Share: