Nonadiabatic Dynamics of Positive Charge during PhotocatalyticWater Splitting on GaN(10-10) Surface: Charge Localization GovernsSplitting Efficiency

Muckerman, J.; Prezhdo, O. V.

doi:10.1021/ja4029395

Title: Nonadiabatic Dynamics of Positive Charge during PhotocatalyticWater Splitting on GaN(10-10) Surface: Charge Localization GovernsSplitting Efficiency

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Authors:: Muckerman, J.; Prezhdo, O. V.

Publication Date:: Thu May 16 00:00:00 EDT 2013

Research Org.:: Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1093205

Report Number(s):: BNL-101542-2013-JA
Journal ID: ISSN 0002--7863; R&D Project: CO-045; KC-03-01-020

DOE Contract Number:: DE-AC02-98CH10886

Resource Type:: Journal Article

Journal Name:: Journal of the American Chemical Society

Additional Journal Information:: Journal Volume: 135; Journal Issue: 23; Journal ID: ISSN 0002--7863

Country of Publication:: United States

Language:: English

Subject:: 30; photocatalyst; water splitting

Citation Formats


                    Akimov A. V., Muckerman, J., and Prezhdo, O. V. Nonadiabatic Dynamics of Positive Charge during PhotocatalyticWater Splitting on GaN(10-10) Surface: Charge Localization GovernsSplitting Efficiency.  United States: N. p., 2013. 
        Web.  doi:10.1021/ja4029395.

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                    Akimov A. V., Muckerman, J., & Prezhdo, O. V. Nonadiabatic Dynamics of Positive Charge during PhotocatalyticWater Splitting on GaN(10-10) Surface: Charge Localization GovernsSplitting Efficiency.  United States.  https://doi.org/10.1021/ja4029395

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                    Akimov A. V., Muckerman, J., and Prezhdo, O. V. 2013.  
        "Nonadiabatic Dynamics of Positive Charge during PhotocatalyticWater Splitting on GaN(10-10) Surface: Charge Localization GovernsSplitting Efficiency".  United States.  https://doi.org/10.1021/ja4029395.

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@article{osti_1093205,

  title        = {Nonadiabatic Dynamics of Positive Charge during PhotocatalyticWater Splitting on GaN(10-10) Surface: Charge Localization GovernsSplitting Efficiency},

  author       = {Akimov A. V. and Muckerman, J. and Prezhdo, O. V.},

  abstractNote = {},

  doi          = {10.1021/ja4029395},

  url          = {https://www.osti.gov/biblio/1093205},
  journal      = {Journal of the American Chemical Society},

  issn         = {0002--7863},

  number       = 23,

  volume       = 135,

  place        = {United States},

  year         = {Thu May 16 00:00:00 EDT 2013},

  month        = {Thu May 16 00:00:00 EDT 2013}

}

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