Radiation tolerance survey of selected silicon photomultipliers to high energy neutron irradiation
- JLAB
A key feature of silicon photomultipliers (SiPMs) that can hinder their wider use in medium and high energy physics applications is their relatively high sensitivity to high energy background radiation, with particular regard to high energy neutrons. Dosages of 1010 neq/cm2 can damage them severely. In this study, some standard versions along with some new formulations are irradiated with a high intensity 241AmBe source up to a total dose of 5 × 109 neq/cm2. Key parameters monitored include dark noise, photon detection efficiency (PDE), gain, and voltage breakdown. Only dark noise was found to change significantly for this range of dosage. Analysis of the data indicates that within each vendor's product line, the change in dark noise is very similar as a function of increasing dose. At present, the best strategy for alleviating the effects of radiation damage is to cool the devices to minimize the effects of increased dark noise with accumulated dose.
- Research Organization:
- Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- AC05-06OR23177
- OSTI ID:
- 1089912
- Report Number(s):
- JLAB-PHY-12-1422; DOE/OR/23177-2691
- Resource Relation:
- Conference: 2012 Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), Oct. 27 2012-Nov. 3 2012, Anaheim, CA
- Country of Publication:
- United States
- Language:
- English
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