skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Radiation tolerance survey of selected silicon photomultipliers to high energy neutron irradiation

Abstract

A key feature of silicon photomultipliers (SiPMs) that can hinder their wider use in medium and high energy physics applications is their relatively high sensitivity to high energy background radiation, with particular regard to high energy neutrons. Dosages of 1010 neq/cm2 can damage them severely. In this study, some standard versions along with some new formulations are irradiated with a high intensity 241AmBe source up to a total dose of 5 × 109 neq/cm2. Key parameters monitored include dark noise, photon detection efficiency (PDE), gain, and voltage breakdown. Only dark noise was found to change significantly for this range of dosage. Analysis of the data indicates that within each vendor's product line, the change in dark noise is very similar as a function of increasing dose. At present, the best strategy for alleviating the effects of radiation damage is to cool the devices to minimize the effects of increased dark noise with accumulated dose.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1]
  1. JLAB
Publication Date:
Research Org.:
Thomas Jefferson National Accelerator Facility, Newport News, VA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1089912
Report Number(s):
JLAB-PHY-12-1422; DOE/OR/23177-2691
DOE Contract Number:  
AC05-06OR23177
Resource Type:
Conference
Resource Relation:
Conference: 2012 Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), Oct. 27 2012-Nov. 3 2012, Anaheim, CA
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY

Citation Formats

Barbosa, Fernando J., McKisson, John E., Qiang, Yi, Steinberger, William, Xi, Wenze, and Zorn, Carl J. Radiation tolerance survey of selected silicon photomultipliers to high energy neutron irradiation. United States: N. p., 2012. Web. doi:10.1109/NSSMIC.2012.6551130.
Barbosa, Fernando J., McKisson, John E., Qiang, Yi, Steinberger, William, Xi, Wenze, & Zorn, Carl J. Radiation tolerance survey of selected silicon photomultipliers to high energy neutron irradiation. United States. doi:10.1109/NSSMIC.2012.6551130.
Barbosa, Fernando J., McKisson, John E., Qiang, Yi, Steinberger, William, Xi, Wenze, and Zorn, Carl J. Thu . "Radiation tolerance survey of selected silicon photomultipliers to high energy neutron irradiation". United States. doi:10.1109/NSSMIC.2012.6551130.
@article{osti_1089912,
title = {Radiation tolerance survey of selected silicon photomultipliers to high energy neutron irradiation},
author = {Barbosa, Fernando J. and McKisson, John E. and Qiang, Yi and Steinberger, William and Xi, Wenze and Zorn, Carl J.},
abstractNote = {A key feature of silicon photomultipliers (SiPMs) that can hinder their wider use in medium and high energy physics applications is their relatively high sensitivity to high energy background radiation, with particular regard to high energy neutrons. Dosages of 1010 neq/cm2 can damage them severely. In this study, some standard versions along with some new formulations are irradiated with a high intensity 241AmBe source up to a total dose of 5 × 109 neq/cm2. Key parameters monitored include dark noise, photon detection efficiency (PDE), gain, and voltage breakdown. Only dark noise was found to change significantly for this range of dosage. Analysis of the data indicates that within each vendor's product line, the change in dark noise is very similar as a function of increasing dose. At present, the best strategy for alleviating the effects of radiation damage is to cool the devices to minimize the effects of increased dark noise with accumulated dose.},
doi = {10.1109/NSSMIC.2012.6551130},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2012},
month = {11}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share: