Magnetoelectric effects and valley-controlled spin quantum gates in transition metal dichalcogenide bilayers

Journal Article · Tue Jan 01 00:00:00 EST 2013 · Nature Communications

DOI:https://doi.org/10.1038/ncomms3053· OSTI ID:1088156

Gong, Zhirui ^[1]; Liu, G. B. ^[1]; Yu, Hongyi ^[2]; Xiao, Di ^[3]; Cui, Xiaodong ^[1]; Xu, Xiaodong ^[4]; Yao, Wang ^[1]

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1. University of Hong Kong, The
2. University of Hongkong
3. Carnegie Mellon University
4. University of Washington

In monolayer group-VI transition metal dichalcogenides, charge carriers have spin and valley degrees of freedom, both associated with magnetic moments. On the other hand, the layer degree of freedom in multilayers is associated with electrical polarization. Here we show that transition metal dichalcogenide bilayers offer an unprecedented platform to realize a strong coupling between the spin, valley and layer pseudospin of holes. Such coupling gives rise to the spin Hall effect and spin-dependent selection rule for optical transitions in inversion symmetric bilayer and leads to a variety of magnetoelectric effects permitting quantum manipulation of these electronic degrees of freedom. Oscillating electric and magnetic fields can both drive the hole spin resonance where the two fields have valley-dependent interference, making an interplay between the spin and valley as information carriers possible for potential valley-spintronic applications. We show how to realize quantum gates on the spin qubit controlled by the valley bit.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: DE-AC05-00OR22725
• OSTI ID: 1088156
• Journal Information: Nature Communications, Vol. 4; ISSN 2041-1723
• Publisher: Nature Publishing Group
• Country of Publication: United States
• Language: English