Laser pumping of thyristors for fast high current rise-times
Abstract
An optically triggered semiconductor switch includes an anode metallization layer; a cathode metallization layer; a semiconductor between the anode metallization layer and the cathode metallization layer and a photon source. The semiconductor includes at least four layers of alternating doping in the form P-N-P-N, in which an outer layer adjacent to the anode metallization layer forms an anode and an outer layer adjacent the cathode metallization layer forms a cathode and in which the anode metallization layer has a window pattern of optically transparent material exposing the anode layer to light. The photon source emits light having a wavelength, with the light from the photon source being configured to match the window pattern of the anode metallization layer.
- Inventors:
- Publication Date:
- Research Org.:
- Applied Pulsed Power, Inc. (Freeville, NY)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1084214
- Patent Number(s):
- 8,461,620
- Application Number:
- 13/111,170
- Assignee:
- Applied Pulsed Power, Inc. (Freeville, NY)
- DOE Contract Number:
- FG02-08ER85188
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Glidden, Steven C., and Sanders, Howard D. Laser pumping of thyristors for fast high current rise-times. United States: N. p., 2013.
Web.
Glidden, Steven C., & Sanders, Howard D. Laser pumping of thyristors for fast high current rise-times. United States.
Glidden, Steven C., and Sanders, Howard D. Tue .
"Laser pumping of thyristors for fast high current rise-times". United States. https://www.osti.gov/servlets/purl/1084214.
@article{osti_1084214,
title = {Laser pumping of thyristors for fast high current rise-times},
author = {Glidden, Steven C. and Sanders, Howard D.},
abstractNote = {An optically triggered semiconductor switch includes an anode metallization layer; a cathode metallization layer; a semiconductor between the anode metallization layer and the cathode metallization layer and a photon source. The semiconductor includes at least four layers of alternating doping in the form P-N-P-N, in which an outer layer adjacent to the anode metallization layer forms an anode and an outer layer adjacent the cathode metallization layer forms a cathode and in which the anode metallization layer has a window pattern of optically transparent material exposing the anode layer to light. The photon source emits light having a wavelength, with the light from the photon source being configured to match the window pattern of the anode metallization layer.},
doi = {},
url = {https://www.osti.gov/biblio/1084214},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {6}
}