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Title: Laser pumping of thyristors for fast high current rise-times

Abstract

An optically triggered semiconductor switch includes an anode metallization layer; a cathode metallization layer; a semiconductor between the anode metallization layer and the cathode metallization layer and a photon source. The semiconductor includes at least four layers of alternating doping in the form P-N-P-N, in which an outer layer adjacent to the anode metallization layer forms an anode and an outer layer adjacent the cathode metallization layer forms a cathode and in which the anode metallization layer has a window pattern of optically transparent material exposing the anode layer to light. The photon source emits light having a wavelength, with the light from the photon source being configured to match the window pattern of the anode metallization layer.

Inventors:
;
Publication Date:
Research Org.:
Applied Pulsed Power, Inc. (Freeville, NY)
Sponsoring Org.:
USDOE
OSTI Identifier:
1084214
Patent Number(s):
8,461,620
Application Number:
13/111,170
Assignee:
Applied Pulsed Power, Inc. (Freeville, NY)
DOE Contract Number:  
FG02-08ER85188
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Glidden, Steven C., and Sanders, Howard D. Laser pumping of thyristors for fast high current rise-times. United States: N. p., 2013. Web.
Glidden, Steven C., & Sanders, Howard D. Laser pumping of thyristors for fast high current rise-times. United States.
Glidden, Steven C., and Sanders, Howard D. Tue . "Laser pumping of thyristors for fast high current rise-times". United States. https://www.osti.gov/servlets/purl/1084214.
@article{osti_1084214,
title = {Laser pumping of thyristors for fast high current rise-times},
author = {Glidden, Steven C. and Sanders, Howard D.},
abstractNote = {An optically triggered semiconductor switch includes an anode metallization layer; a cathode metallization layer; a semiconductor between the anode metallization layer and the cathode metallization layer and a photon source. The semiconductor includes at least four layers of alternating doping in the form P-N-P-N, in which an outer layer adjacent to the anode metallization layer forms an anode and an outer layer adjacent the cathode metallization layer forms a cathode and in which the anode metallization layer has a window pattern of optically transparent material exposing the anode layer to light. The photon source emits light having a wavelength, with the light from the photon source being configured to match the window pattern of the anode metallization layer.},
doi = {},
url = {https://www.osti.gov/biblio/1084214}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {6}
}

Patent:

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