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Title: Method for solid state crystal growth

Abstract

A novel method for high quality crystal growth of intermetallic clathrates is presented. The synthesis of high quality pure phase crystals has been complicated by the simultaneous formation of both clathrate type-I and clathrate type-II structures. It was found that selective, phase pure, single-crystal growth of type-I and type-II clathrates can be achieved by maintaining sufficient partial pressure of a chemical constituent during slow, controlled deprivation of the chemical constituent from the primary reactant. The chemical constituent is slowly removed from the primary reactant by the reaction of the chemical constituent vapor with a secondary reactant, spatially separated from the primary reactant, in a closed volume under uniaxial pressure and heat to form the single phase pure crystals.

Inventors:
;
Publication Date:
Research Org.:
DOESC (USDOE Office of Science (SC) (United States))
Sponsoring Org.:
USDOE
OSTI Identifier:
1083808
Patent Number(s):
8,414,858
Application Number:
12/859,534
Assignee:
University of South Florida (Tampa, FL) DOESC
DOE Contract Number:  
FG02-04ER46145
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Nolas, George S., and Beekman, Matthew K. Method for solid state crystal growth. United States: N. p., 2013. Web.
Nolas, George S., & Beekman, Matthew K. Method for solid state crystal growth. United States.
Nolas, George S., and Beekman, Matthew K. Tue . "Method for solid state crystal growth". United States. https://www.osti.gov/servlets/purl/1083808.
@article{osti_1083808,
title = {Method for solid state crystal growth},
author = {Nolas, George S. and Beekman, Matthew K.},
abstractNote = {A novel method for high quality crystal growth of intermetallic clathrates is presented. The synthesis of high quality pure phase crystals has been complicated by the simultaneous formation of both clathrate type-I and clathrate type-II structures. It was found that selective, phase pure, single-crystal growth of type-I and type-II clathrates can be achieved by maintaining sufficient partial pressure of a chemical constituent during slow, controlled deprivation of the chemical constituent from the primary reactant. The chemical constituent is slowly removed from the primary reactant by the reaction of the chemical constituent vapor with a secondary reactant, spatially separated from the primary reactant, in a closed volume under uniaxial pressure and heat to form the single phase pure crystals.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {4}
}

Patent:

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