Fluorine compounds for doping conductive oxide thin films

Patent · 23 April 2013

OSTI ID:1083316

Gessert, Tim; Li, Xiaonan; Barnes, Teresa M; Torres, Jr., Robert; Wyse, Carrie L

Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate.

• Research Organization: NREL (National Renewable Energy Laboratory (NREL), Golden, CO (United States))
• Sponsoring Organization: USDOE
• DOE Contract Number: AC36-08GO28308
• Assignee: Alliance for Sustainable Energy, LLC (Golden, CO)
• Patent Number(s): 8,425,978
• Application Number: 12/884,490
• OSTI ID: 1083316
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY