skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Cubic nitride templates

Abstract

A polymer-assisted deposition process for deposition of epitaxial cubic metal nitride films and the like is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures under a suitable atmosphere to yield metal nitride films and the like. Such films can be used as templates for the development of high quality cubic GaN based electronic devices.

Inventors:
; ; ; ;
Publication Date:
Research Org.:
LANL (Los Alamos National Laboratory (LANL), Los Alamos, NM (United States))
Sponsoring Org.:
USDOE
OSTI Identifier:
1083281
Patent Number(s):
8,431,253
Application Number:
12/321,705
Assignee:
Los Alamos National Security, LLC (Los Alamos, NM) LANL
DOE Contract Number:  
AC52-06NA25396
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Burrell, Anthony K, McCleskey, Thomas Mark, Jia, Quanxi, Mueller, Alexander H, and Luo, Hongmei. Cubic nitride templates. United States: N. p., 2013. Web.
Burrell, Anthony K, McCleskey, Thomas Mark, Jia, Quanxi, Mueller, Alexander H, & Luo, Hongmei. Cubic nitride templates. United States.
Burrell, Anthony K, McCleskey, Thomas Mark, Jia, Quanxi, Mueller, Alexander H, and Luo, Hongmei. Tue . "Cubic nitride templates". United States. https://www.osti.gov/servlets/purl/1083281.
@article{osti_1083281,
title = {Cubic nitride templates},
author = {Burrell, Anthony K and McCleskey, Thomas Mark and Jia, Quanxi and Mueller, Alexander H and Luo, Hongmei},
abstractNote = {A polymer-assisted deposition process for deposition of epitaxial cubic metal nitride films and the like is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures under a suitable atmosphere to yield metal nitride films and the like. Such films can be used as templates for the development of high quality cubic GaN based electronic devices.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {4}
}

Patent:

Save / Share: