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Title: Photovoltaic device comprising compositionally graded intrinsic photoactive layer

Abstract

Photovoltaic devices and methods of making photovoltaic devices comprising at least one compositionally graded photoactive layer, said method comprising providing a substrate; growing onto the substrate a uniform intrinsic photoactive layer having one surface disposed upon the substrate and an opposing second surface, said intrinsic photoactive layer consisting essentially of In.sub.1-xA.sub.xN,; wherein: i. 0.ltoreq.x.ltoreq.1; ii. A is gallium, aluminum, or combinations thereof; and iii. x is at least 0 on one surface of the intrinsic photoactive layer and is compositionally graded throughout the layer to reach a value of 1 or less on the opposing second surface of the layer; wherein said intrinsic photoactive layer is isothermally grown by means of energetic neutral atom beam lithography and epitaxy at a temperature of 600.degree. C. or less using neutral nitrogen atoms having a kinetic energy of from about 1.0 eV to about 5.0 eV, and wherein the intrinsic photoactive layer is grown at a rate of from about 5 nm/min to about 100 nm/min.

Inventors:
;
Publication Date:
Research Org.:
LANL (Los Alamos National Laboratory (LANL), Los Alamos, NM (United States))
Sponsoring Org.:
USDOE
OSTI Identifier:
1083272
Patent Number(s):
8,431,815
Application Number:
12/644,915
Assignee:
Los Alamos National Security, LLC (Los Alamos, NM) LANL
DOE Contract Number:  
AC52-06NA25396
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Citation Formats

Hoffbauer, Mark A, and Williamson, Todd L. Photovoltaic device comprising compositionally graded intrinsic photoactive layer. United States: N. p., 2013. Web.
Hoffbauer, Mark A, & Williamson, Todd L. Photovoltaic device comprising compositionally graded intrinsic photoactive layer. United States.
Hoffbauer, Mark A, and Williamson, Todd L. Tue . "Photovoltaic device comprising compositionally graded intrinsic photoactive layer". United States. doi:. https://www.osti.gov/servlets/purl/1083272.
@article{osti_1083272,
title = {Photovoltaic device comprising compositionally graded intrinsic photoactive layer},
author = {Hoffbauer, Mark A and Williamson, Todd L},
abstractNote = {Photovoltaic devices and methods of making photovoltaic devices comprising at least one compositionally graded photoactive layer, said method comprising providing a substrate; growing onto the substrate a uniform intrinsic photoactive layer having one surface disposed upon the substrate and an opposing second surface, said intrinsic photoactive layer consisting essentially of In.sub.1-xA.sub.xN,; wherein: i. 0.ltoreq.x.ltoreq.1; ii. A is gallium, aluminum, or combinations thereof; and iii. x is at least 0 on one surface of the intrinsic photoactive layer and is compositionally graded throughout the layer to reach a value of 1 or less on the opposing second surface of the layer; wherein said intrinsic photoactive layer is isothermally grown by means of energetic neutral atom beam lithography and epitaxy at a temperature of 600.degree. C. or less using neutral nitrogen atoms having a kinetic energy of from about 1.0 eV to about 5.0 eV, and wherein the intrinsic photoactive layer is grown at a rate of from about 5 nm/min to about 100 nm/min.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Apr 30 00:00:00 EDT 2013},
month = {Tue Apr 30 00:00:00 EDT 2013}
}

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