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Title: Large-scale fabrication of vertically aligned ZnO nanowire arrays

Abstract

In a method for growing a nanowire array, a photoresist layer is placed onto a nanowire growth layer configured for growing nanowires therefrom. The photoresist layer is exposed to a coherent light interference pattern that includes periodically alternately spaced dark bands and light bands along a first orientation. The photoresist layer exposed to the coherent light interference pattern along a second orientation, transverse to the first orientation. The photoresist layer developed so as to remove photoresist from areas corresponding to areas of intersection of the dark bands of the interference pattern along the first orientation and the dark bands of the interference pattern along the second orientation, thereby leaving an ordered array of holes passing through the photoresist layer. The photoresist layer and the nanowire growth layer are placed into a nanowire growth environment, thereby growing nanowires from the nanowire growth layer through the array of holes.

Inventors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Georgia Tech Research Corporation (Atlanta, GA)
Sponsoring Org.:
USDOE
OSTI Identifier:
1083221
Patent Number(s):
8,367,462
Application Number:
13/091,855
Assignee:
Georgia Tech Research Corporation (Atlanta, GA) CHO
DOE Contract Number:
FG02-07ER46394
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Wang, Zhong L, Das, Suman, Xu, Sheng, Yuan, Dajun, Guo, Rui, Wei, Yaguang, and Wu, Wenzhuo. Large-scale fabrication of vertically aligned ZnO nanowire arrays. United States: N. p., 2013. Web.
Wang, Zhong L, Das, Suman, Xu, Sheng, Yuan, Dajun, Guo, Rui, Wei, Yaguang, & Wu, Wenzhuo. Large-scale fabrication of vertically aligned ZnO nanowire arrays. United States.
Wang, Zhong L, Das, Suman, Xu, Sheng, Yuan, Dajun, Guo, Rui, Wei, Yaguang, and Wu, Wenzhuo. 2013. "Large-scale fabrication of vertically aligned ZnO nanowire arrays". United States. doi:. https://www.osti.gov/servlets/purl/1083221.
@article{osti_1083221,
title = {Large-scale fabrication of vertically aligned ZnO nanowire arrays},
author = {Wang, Zhong L and Das, Suman and Xu, Sheng and Yuan, Dajun and Guo, Rui and Wei, Yaguang and Wu, Wenzhuo},
abstractNote = {In a method for growing a nanowire array, a photoresist layer is placed onto a nanowire growth layer configured for growing nanowires therefrom. The photoresist layer is exposed to a coherent light interference pattern that includes periodically alternately spaced dark bands and light bands along a first orientation. The photoresist layer exposed to the coherent light interference pattern along a second orientation, transverse to the first orientation. The photoresist layer developed so as to remove photoresist from areas corresponding to areas of intersection of the dark bands of the interference pattern along the first orientation and the dark bands of the interference pattern along the second orientation, thereby leaving an ordered array of holes passing through the photoresist layer. The photoresist layer and the nanowire growth layer are placed into a nanowire growth environment, thereby growing nanowires from the nanowire growth layer through the array of holes.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 2013,
month = 2
}

Patent:

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