Interplane resistivity of isovalent doped BaFe2(As1-xPx)2
- Ames Laboratory
- Kyoto University
Temperature-dependent interplane resistivity ρc(T) was measured for the iron-based superconductor BaFe2(As1-xPx)2 over a broad isoelectron phosphorus substitution range from x=0 to x=0.60, from nonsuperconducting parent compound to heavily overdoped superconducting composition with Tc≈10K. The features due to structural and magnetic transitions are clearly resolved in ρc(T) of the underdoped crystals. A characteristic maximum in ρc(T), found in the parent BaFe2As2 at around 200 K, moves rapidly with phosphorus substitution to high temperatures. At the optimal doping, the interplane resistivity shows T-linear temperature dependence without any crossover anomalies, similar to the previously reported in-plane resistivity. This observation is in stark contrast with dissimilar temperature dependencies found at optimal doping in electron-doped Ba(Fe1-xCox)2As2. Our finding suggests that despite similar values of the resistivity and its anisotropy, the temperature-dependent transport in the normal state is very different in electron and isoelectron-doped compounds. Similar temperature dependence of both in-plane and interplane resistivities, in which the dominant contributions are coming from different parts of the Fermi surface, suggests that scattering is the same on the whole Fermi surface. Since magnetic fluctuations are expected to be much stronger on the quasinested sheets, this observation may point to the importance of the interorbital scattering between different sheets.
- Research Organization:
- Ames Lab., Ames, IA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC02-07CH11358
- OSTI ID:
- 1082867
- Report Number(s):
- IS-J 7957
- Journal Information:
- Physical Review B, Vol. 87, Issue 10
- Country of Publication:
- United States
- Language:
- English
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