Method of plasma etching Ga-based compound semiconductors

Qiu, Weibin; Goddard, Lynford L.

Title: Method of plasma etching Ga-based compound semiconductors

Patent · Tue Dec 25 00:00:00 EST 2012

OSTI ID:1082139

Qiu, Weibin; Goddard, Lynford L.

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

View Patent

Cite

Export

Save

Research Organization:: Univ. of Illinois at Urbana-Champaign, IL (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC52-07NA27344

Assignee:: The Board of Trustees of the University of Illinois (Urbana, IL)

Patent Number(s):: 8,338,308

Application Number:: 12/638,741

OSTI ID:: 1082139

Country of Publication:: United States

Language:: English

References (25)

Dry etch recess of an InGaAs/InAlAs/InP HEMT like structure using a low energy high density SiCl/sub 4/ plasma (ICP) Maher, H.; Etrillard, J.; Decobert, J. Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129) https://doi.org/10.1109/ICIPRM.1998.712786	conference	January 1998
Investigation of GaAs Dry Etching in a Planar Inductively Coupled BCl[sub 3] Plasma Lim, W. T.; Baek, I. G.; Jung, P. G. Journal of The Electrochemical Society, Vol. 151, Issue 3 https://doi.org/10.1149/1.1643741	journal	January 2004
High aspect ratio GaAs nanowires made by ICP-RIE etching using Cl2/N2 chemistry Jalabert, Laurent; Dubreuil, Pascal; Carcenac, Franck Microelectronic Engineering, Vol. 85, Issue 5-6 https://doi.org/10.1016/j.mee.2008.01.063	journal	May 2008
Nanohole Arrays with Sub-30 nm Diameter Formed on GaAs Using Nanoporous Alumina Mask Jung, Mi; Lee, Seok; Jhon, Young Min Japanese Journal of Applied Physics, Vol. 46, Issue 7A https://doi.org/10.1143/JJAP.46.4410	journal	July 2007
Cl[sub 2] plasma passivation of etch induced damage in GaAs and InGaAs with an inductively coupled plasma source Berg, E. W.; Pang, S. W. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 17, Issue 6 https://doi.org/10.1116/1.591056	journal	January 1999
Sidewall passivation assisted by a silicon coverplate during Cl[sub 2]–H[sub 2] and HBr inductively coupled plasma etching of InP for photonic devices Bouchoule, S.; Patriarche, G.; Guilet, S. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 26, Issue 2 https://doi.org/10.1116/1.2898455	journal	January 2008
Smooth and vertical-sidewall InP etching using Cl[sub 2]/N[sub 2] inductively coupled plasma Lin, Jie; Leven, Andreas; Weimann, N. G. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 22, Issue 2 https://doi.org/10.1116/1.1648066	journal	January 2004
N2-Based ICP-RIE Etching for InP-Based Photonic Crystal Membranes Lee, K. H.; Guilet, S.; Sagnes, I. 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials https://doi.org/10.1109/ICIPRM.2007.381163	conference	May 2007
Study of GaAs and GaInP etching in Cl2/Ar electron cyclotron resonance plasma Yoon, S. Thin Solid Films, Vol. 394, Issue 1-2 https://doi.org/10.1016/S0040-6090(01)01139-7	journal	August 2001
Geometrical pattern effect on silicon deep etching by an inductively coupled plasma system Chung, Chen-Kuei Journal of Micromechanics and Microengineering, Vol. 14, Issue 4 https://doi.org/10.1088/0960-1317/14/4/029	journal	February 2004
Effect of H[sub 2] on the etch profile of InP/InGaAsP alloys in Cl[sub 2]/Ar/H[sub 2] inductively coupled plasma reactive ion etching chemistries for photonic device fabrication Rommel, Sean L.; Jang, Jae-Hyung; Lu, Wu Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 20, Issue 4 https://doi.org/10.1116/1.1486232	journal	January 2002
Study of grass formation in GaAs backside via etching using inductively coupled plasma system Nam, P. S.; Ferreira, L. M.; Lee, T. Y. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 18, Issue 6 https://doi.org/10.1116/1.1320803	journal	January 2000
The effect of hydrogen as an additive in reactive ion etching of GaAs for obtaining polished surface Dultsev, F. N.; Nenasheva, L. A. Applied Surface Science, Vol. 253, Issue 3 https://doi.org/10.1016/j.apsusc.2006.01.073	journal	November 2006
High-density plasma etching of compound semiconductors Shul, R. J.; McClellan, G. B.; Briggs, R. D. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 15, Issue 3 https://doi.org/10.1116/1.580696	journal	May 1997
Anisotropic etching of InP with low sidewall and surface induced damage in inductively coupled plasma etching using SiCl4 Etrillard, J.; Ossart, P.; Patriarche, G. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 15, Issue 3 https://doi.org/10.1116/1.580695	journal	May 1997
Fabrication of high-aspect-ratio, sub-micron gratings in AlGaInP/GaAs laser structures using a BCl ₃ /Cl ₂ /Ar inductively coupled plasma Edwards, G. T.; Sobiesierski, A.; Westwood, D. I. Semiconductor Science and Technology, Vol. 22, Issue 9 https://doi.org/10.1088/0268-1242/22/9/006	journal	August 2007
Smooth reactive ion etching of GaAs using a hydrogen plasma pretreatment Choquette, Kent D. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 13, Issue 1 https://doi.org/10.1116/1.587982	journal	January 1995
Optimization of gas flow and etch depth uniformity for plasma etching of large area GaAs wafers Lee, J. W.; Jung, P. G.; Devre, M. Solid-State Electronics, Vol. 46, Issue 5 https://doi.org/10.1016/S0038-1101(01)00328-8	journal	May 2002
Advanced selective dry etching of GaAs/AlGaAs in high density inductively coupled plasmas Lee, J. W.; Devre, M. W.; Reelfs, B. H. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 18, Issue 4 https://doi.org/10.1116/1.582329	journal	July 2000
Inductively coupled plasma etching of GaAs low loss waveguides for a traveling waveguide polarization converter, using chlorine chemistry Lu, J.; Meng, X.; SpringThorpe, A. J. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 22, Issue 3 https://doi.org/10.1116/1.1667502	journal	January 2004
A low damage RIE process for the fabrication of compound semiconductor based transistors with sub-100nm tungsten gates Li, X.; Cao, X.; Zhou, H. Microelectronic Engineering, Vol. 83, Issue 4-9 https://doi.org/10.1016/j.mee.2006.01.074	journal	April 2006
Etching Characteristics and Mechanism of InP in Inductively Coupled HBr/Ar Plasma Lee, Hyun Woo; Kim, Mansu; Min, Nam-Ki Japanese Journal of Applied Physics, Vol. 47, Issue 8 https://doi.org/10.1143/JJAP.47.6917	journal	August 2008
Deeply etched waveguide structures for quantum cascade lasers Schartner, S.; Golka, S.; Pflügl, C. Microelectronic Engineering, Vol. 83, Issue 4-9 https://doi.org/10.1016/j.mee.2006.01.032	journal	April 2006
Reactive ion etching lag on high rate oxide etching using high density plasma Akimoto, Takeshi Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 13, Issue 6 https://doi.org/10.1116/1.588006	journal	November 1995
Processing of deeply etched GaAs/AlGaAs quantum cascade lasers with grating structures Golka, S.; Austerer, M.; Pflügl, C. MRS Proceedings, Vol. 829 https://doi.org/10.1557/PROC-829-B5.2	journal	January 2004

Similar Records

Method of plasma etching GA-based compound semiconductors

Patent · Tue Jan 01 00:00:00 EST 2013 · OSTI ID:1082139

Qiu, Weibin; Goddard, Lynford L.

Apparatus for the etching for semiconductor devices

Patent · Tue Jan 11 00:00:00 EST 1983 · OSTI ID:1082139

Reinberg, A R; Steinberg, G N

Anisotropic Ta{sub 2}O{sub 5} waveguide etching using inductively coupled plasma etching

Journal Article · Tue Jul 01 00:00:00 EDT 2014 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films · OSTI ID:1082139

Chen, Ruiqi Y.; Pearce, Stuart J.; Charlton, Martin D. B.

Related Subjects

36 MATERIALS SCIENCE

Title: Method of plasma etching Ga-based compound semiconductors

Citation Formats

References (25)

Similar Records

Related Subjects