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Title: Method of plasma etching Ga-based compound semiconductors

Abstract

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

Inventors:
;
Publication Date:
Research Org.:
The Board of Trustees of the University of Illinois (Urbana, IL)
Sponsoring Org.:
USDOE
OSTI Identifier:
1082139
Patent Number(s):
8,338,308
Application Number:
12/638,741
Assignee:
The Board of Trustees of the University of Illinois (Urbana, IL) LLNL
DOE Contract Number:  
AC52-07NA27344
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Qiu, Weibin, and Goddard, Lynford L. Method of plasma etching Ga-based compound semiconductors. United States: N. p., 2012. Web.
Qiu, Weibin, & Goddard, Lynford L. Method of plasma etching Ga-based compound semiconductors. United States.
Qiu, Weibin, and Goddard, Lynford L. Tue . "Method of plasma etching Ga-based compound semiconductors". United States. doi:. https://www.osti.gov/servlets/purl/1082139.
@article{osti_1082139,
title = {Method of plasma etching Ga-based compound semiconductors},
author = {Qiu, Weibin and Goddard, Lynford L.},
abstractNote = {A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 25 00:00:00 EST 2012},
month = {Tue Dec 25 00:00:00 EST 2012}
}

Patent:

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