Interface control of bulk ferroelectric polarization
- University of California, Berkeley
- ORNL
- Lawrence Berkeley National Laboratory (LBNL)
- Korea Advanced Institute of Science and Technology
- University of California, Berkeley & LBNL
- University of Illinois, Urbana-Champaign
The control of material interfaces at the atomic level has led to no- vel interfacial properties and functionalities. In particular, the study of polar discontinuities at interfaces between complex oxides lies at the frontier of modern condensed matter research. Here we em- ploy a combination of experimental measurements and theoretical calculations to demonstrate the control of a bulk property, namely ferroelectric polarization, of a heteroepitaxial bilayer by precise atomic-scale interface engineering. More specifically, the control is achieved by exploiting the interfacial valence mismatch to influence the electrostatic potential step across the interface, which manifests itself as the biased-voltage in ferroelectric hysteresis loops and determines the ferroelectric state. A broad study of diverse systems comprising different ferroelectrics and conducting perovskite un- derlayers extends the generality of this phenomenon.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 1081973
- Journal Information:
- Proceedings of the National Academy of Sciences, Vol. 109, Issue 25; ISSN 0027--8424
- Country of Publication:
- United States
- Language:
- English
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