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Title: Improvement of Off-State Stress Critical Voltage by Using Pt-gated AlGaN/GaN High Electron Mobility Transistors

Abstract

By replacing the commonly used Ni/Au gate metallization with Pt/Ti/Au, the critical voltage for degradation of AlGaN/GaN High Electron Mobility Transistors (HEMTs) during off-state biasing stress was significantly increased. The typical critical voltage for the HEMTs with Ni/Au gate metallization was around -55V. By sharp contrast, no critical voltage was observed for the HEMTs with Pt/Ti/Au gate metallization, even up -100V, which was the instrumental limitation in this experiment. Both Schottky forward and reverse gate characteristics of the Ni/Au degraded once the gate voltage passed the critical voltage of -55V. There was no degradation exhibited for the HEMTs with Pt/Ti/Au gate metallization.

Authors:
 [1];  [2];  [2];  [2];  [1];  [3];  [4];  [4];  [4];  [1]
  1. University of Florida
  2. University of Florida, Gainesville
  3. ORNL
  4. Kopin Corporation, Taunton, MA
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1081701
DOE Contract Number:  
DE-AC05-00OR22725
Resource Type:
Journal Article
Journal Name:
Electrochemical and Solid-State Letters
Additional Journal Information:
Journal Volume: 14; Journal Issue: 7; Journal ID: ISSN 1099-0062
Country of Publication:
United States
Language:
English

Citation Formats

Lo, C. F., Liu, L., Kang, Tsung Sheng, Gila, Brent P., Pearton, S. J., Kravchenko, Ivan I, Laboutin, O., Cao, Yu, Johnson, Wayne J., and Ren, F. Improvement of Off-State Stress Critical Voltage by Using Pt-gated AlGaN/GaN High Electron Mobility Transistors. United States: N. p., 2011. Web. doi:10.1149/1.3578388.
Lo, C. F., Liu, L., Kang, Tsung Sheng, Gila, Brent P., Pearton, S. J., Kravchenko, Ivan I, Laboutin, O., Cao, Yu, Johnson, Wayne J., & Ren, F. Improvement of Off-State Stress Critical Voltage by Using Pt-gated AlGaN/GaN High Electron Mobility Transistors. United States. https://doi.org/10.1149/1.3578388
Lo, C. F., Liu, L., Kang, Tsung Sheng, Gila, Brent P., Pearton, S. J., Kravchenko, Ivan I, Laboutin, O., Cao, Yu, Johnson, Wayne J., and Ren, F. 2011. "Improvement of Off-State Stress Critical Voltage by Using Pt-gated AlGaN/GaN High Electron Mobility Transistors". United States. https://doi.org/10.1149/1.3578388.
@article{osti_1081701,
title = {Improvement of Off-State Stress Critical Voltage by Using Pt-gated AlGaN/GaN High Electron Mobility Transistors},
author = {Lo, C. F. and Liu, L. and Kang, Tsung Sheng and Gila, Brent P. and Pearton, S. J. and Kravchenko, Ivan I and Laboutin, O. and Cao, Yu and Johnson, Wayne J. and Ren, F.},
abstractNote = {By replacing the commonly used Ni/Au gate metallization with Pt/Ti/Au, the critical voltage for degradation of AlGaN/GaN High Electron Mobility Transistors (HEMTs) during off-state biasing stress was significantly increased. The typical critical voltage for the HEMTs with Ni/Au gate metallization was around -55V. By sharp contrast, no critical voltage was observed for the HEMTs with Pt/Ti/Au gate metallization, even up -100V, which was the instrumental limitation in this experiment. Both Schottky forward and reverse gate characteristics of the Ni/Au degraded once the gate voltage passed the critical voltage of -55V. There was no degradation exhibited for the HEMTs with Pt/Ti/Au gate metallization.},
doi = {10.1149/1.3578388},
url = {https://www.osti.gov/biblio/1081701}, journal = {Electrochemical and Solid-State Letters},
issn = {1099-0062},
number = 7,
volume = 14,
place = {United States},
year = {Sat Jan 01 00:00:00 EST 2011},
month = {Sat Jan 01 00:00:00 EST 2011}
}