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Title: Ferroelectric Gated Electrcial Transport in CdS Nanotetrapods

Abstract

Complex nanostructures such as semiconductor nanotetrapods are promising building blocks for next-generation nanoelectronics. Here we construct a field effect transistor (FET) based on single CdS nanotetrapods with a ferroelectric Ba0.7Sr0.3TiO3 (BST) film as high- , switchable gate dielectric. A cryogenic four-probe scanning tunneling microscopy (STM) is used to probe the electrical transport through individual nanotetrapods, which reveals a p-type field effect up to room temperature. The conductance modulation in the FET originates from the channel tuning in the arm-core-arm junctions of nanotetrapods, displaying a single-electron transistor effect at low temperature (8.5 K). The ferroelectric gate dielectric enables not only an enhanced capacitance coupling but the non-volatile memory effect as well. A proof-of-principle of ferroelectric FET operation has thus been demonstrated in a nanoscale three-dimensional object and at the single electron level.

Authors:
 [1];  [1];  [2];  [1];  [1];  [2];  [2];  [2];  [1];  [1]
  1. ORNL
  2. Chinese Academy of Sciences
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Center for Nanophase Materials Sciences
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1081652
DOE Contract Number:  
DE-AC05-00OR22725
Resource Type:
Journal Article
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 11; Journal Issue: 5; Journal ID: ISSN 1530--6984
Country of Publication:
United States
Language:
English

Citation Formats

Fu, Wangyang, Qin, Shengyong, Liu, Lei, Kim, Tae Hwan, Hellstrom, Sondra L, Wang, Wenlong, Liang, Wenjie, Bai, Xuedong, Li, An-Ping, and Wang, Enge. Ferroelectric Gated Electrcial Transport in CdS Nanotetrapods. United States: N. p., 2011. Web. doi:10.1021/nl104398v.
Fu, Wangyang, Qin, Shengyong, Liu, Lei, Kim, Tae Hwan, Hellstrom, Sondra L, Wang, Wenlong, Liang, Wenjie, Bai, Xuedong, Li, An-Ping, & Wang, Enge. Ferroelectric Gated Electrcial Transport in CdS Nanotetrapods. United States. doi:10.1021/nl104398v.
Fu, Wangyang, Qin, Shengyong, Liu, Lei, Kim, Tae Hwan, Hellstrom, Sondra L, Wang, Wenlong, Liang, Wenjie, Bai, Xuedong, Li, An-Ping, and Wang, Enge. Sat . "Ferroelectric Gated Electrcial Transport in CdS Nanotetrapods". United States. doi:10.1021/nl104398v.
@article{osti_1081652,
title = {Ferroelectric Gated Electrcial Transport in CdS Nanotetrapods},
author = {Fu, Wangyang and Qin, Shengyong and Liu, Lei and Kim, Tae Hwan and Hellstrom, Sondra L and Wang, Wenlong and Liang, Wenjie and Bai, Xuedong and Li, An-Ping and Wang, Enge},
abstractNote = {Complex nanostructures such as semiconductor nanotetrapods are promising building blocks for next-generation nanoelectronics. Here we construct a field effect transistor (FET) based on single CdS nanotetrapods with a ferroelectric Ba0.7Sr0.3TiO3 (BST) film as high- , switchable gate dielectric. A cryogenic four-probe scanning tunneling microscopy (STM) is used to probe the electrical transport through individual nanotetrapods, which reveals a p-type field effect up to room temperature. The conductance modulation in the FET originates from the channel tuning in the arm-core-arm junctions of nanotetrapods, displaying a single-electron transistor effect at low temperature (8.5 K). The ferroelectric gate dielectric enables not only an enhanced capacitance coupling but the non-volatile memory effect as well. A proof-of-principle of ferroelectric FET operation has thus been demonstrated in a nanoscale three-dimensional object and at the single electron level.},
doi = {10.1021/nl104398v},
journal = {Nano Letters},
issn = {1530--6984},
number = 5,
volume = 11,
place = {United States},
year = {2011},
month = {1}
}