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Title: The mechanism for polarity inversion of GaN via a thin AlN layer: direct experimental evidence

Abstract

Lateral-polarity heterostructures of GaN on c-sapphire were prepared by deposition and patterning of a thin low-temperature AlN nucleation layer. Adjacent macroscopic domains were found to have opposite polarity; domains grown on the AlN nucleation layer were Ga-polar while those grown on the nitrided sapphire were N-polar, as confirmed by convergent-beam electron diffraction and Z- contrast images. We directly determined the atomic interface structure between the AlN and c-sapphire with an aberration-corrected scanning transmission electron microscope at ~1.0 resolution. This is the direct experimental evidence for the origin of the polarity control in III-nitrides. This understanding is an important step toward manipulating polarity in these semiconductors.

Authors:
 [1];  [2];  [3];  [3];  [1];  [1]
  1. ORNL
  2. National Renewable Energy Laboratory (NREL)
  3. North Carolina State University
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1081598
DOE Contract Number:  
DE-AC05-00OR22725
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 91; Journal Issue: 203115
Country of Publication:
United States
Language:
English

Citation Formats

Pennycook, Stephen J, Liu, Ford, Collazo, Ramon, Mita, Seiji, Sitar, Zlatko, and Duscher, Gerd J M. The mechanism for polarity inversion of GaN via a thin AlN layer: direct experimental evidence. United States: N. p., 2007. Web.
Pennycook, Stephen J, Liu, Ford, Collazo, Ramon, Mita, Seiji, Sitar, Zlatko, & Duscher, Gerd J M. The mechanism for polarity inversion of GaN via a thin AlN layer: direct experimental evidence. United States.
Pennycook, Stephen J, Liu, Ford, Collazo, Ramon, Mita, Seiji, Sitar, Zlatko, and Duscher, Gerd J M. Mon . "The mechanism for polarity inversion of GaN via a thin AlN layer: direct experimental evidence". United States. doi:.
@article{osti_1081598,
title = {The mechanism for polarity inversion of GaN via a thin AlN layer: direct experimental evidence},
author = {Pennycook, Stephen J and Liu, Ford and Collazo, Ramon and Mita, Seiji and Sitar, Zlatko and Duscher, Gerd J M},
abstractNote = {Lateral-polarity heterostructures of GaN on c-sapphire were prepared by deposition and patterning of a thin low-temperature AlN nucleation layer. Adjacent macroscopic domains were found to have opposite polarity; domains grown on the AlN nucleation layer were Ga-polar while those grown on the nitrided sapphire were N-polar, as confirmed by convergent-beam electron diffraction and Z- contrast images. We directly determined the atomic interface structure between the AlN and c-sapphire with an aberration-corrected scanning transmission electron microscope at ~1.0 resolution. This is the direct experimental evidence for the origin of the polarity control in III-nitrides. This understanding is an important step toward manipulating polarity in these semiconductors.},
doi = {},
journal = {Applied Physics Letters},
number = 203115,
volume = 91,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}