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Title: Mechanism of selective area growth of GaN nanorods by pulsed mode metalorganic chemical vapor deposition

Abstract

The growth mechanism for the formation of GaN nanorods using metalorganic chemical vapor deposition (MOCVD) selective area growth by pulsed source injection is proposed. The pulsed mode procedure and the kinetic model are discussed and experiments performed to support the model are described. The achievement of rod shape nanostructures grown by the pulsed mode can be attributed to two mechanisms: (1) the differences in the adsorption/desorption behavior of Ga adatoms on the c-plane (0001) and the boundary m-planes $$\{ 1\bar {1}0 0\} $$, and (2) the growth behavior of the semi-polar planes (especially the semi-polar $$\{ 1\bar {1}0 1\} $$ plane).

Authors:
; ;
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC); Center for Energy Nanoscience (CEN)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1081104
DOE Contract Number:  
SC0001013
Resource Type:
Journal Article
Journal Name:
Nanotechnology
Additional Journal Information:
Journal Volume: 23(46); Related Information: CEN partners with University of Southern California (lead); University of Illinois, Urbana-Champaign; University of Michigan; University of Virginia
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; solar (photovoltaic), solar (fuels), solid state lighting, charge transport, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)

Citation Formats

Lin, Yen-Ting, Yeh, Ting-Wei, and Dapkus, P. Daniel. Mechanism of selective area growth of GaN nanorods by pulsed mode metalorganic chemical vapor deposition. United States: N. p., 2012. Web. doi:10.1088/0957-4484/23/46/465601.
Lin, Yen-Ting, Yeh, Ting-Wei, & Dapkus, P. Daniel. Mechanism of selective area growth of GaN nanorods by pulsed mode metalorganic chemical vapor deposition. United States. doi:10.1088/0957-4484/23/46/465601.
Lin, Yen-Ting, Yeh, Ting-Wei, and Dapkus, P. Daniel. Tue . "Mechanism of selective area growth of GaN nanorods by pulsed mode metalorganic chemical vapor deposition". United States. doi:10.1088/0957-4484/23/46/465601.
@article{osti_1081104,
title = {Mechanism of selective area growth of GaN nanorods by pulsed mode metalorganic chemical vapor deposition},
author = {Lin, Yen-Ting and Yeh, Ting-Wei and Dapkus, P. Daniel},
abstractNote = {The growth mechanism for the formation of GaN nanorods using metalorganic chemical vapor deposition (MOCVD) selective area growth by pulsed source injection is proposed. The pulsed mode procedure and the kinetic model are discussed and experiments performed to support the model are described. The achievement of rod shape nanostructures grown by the pulsed mode can be attributed to two mechanisms: (1) the differences in the adsorption/desorption behavior of Ga adatoms on the c-plane (0001) and the boundary m-planes $\{ 1\bar {1}0 0\} $, and (2) the growth behavior of the semi-polar planes (especially the semi-polar $\{ 1\bar {1}0 1\} $ plane).},
doi = {10.1088/0957-4484/23/46/465601},
journal = {Nanotechnology},
number = ,
volume = 23(46),
place = {United States},
year = {2012},
month = {10}
}