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Title: Study of the Thermoelectric Properties of Lead Selenide Doped with Boron, Gallium, Indium, or Thallium

Abstract

Group IIIA elements (B, Ga, In, and Tl) have been doped into PbSe for enhancement of thermoelectric properties. The electrical conductivity, Seebeck coefficient, and thermal conductivity were systematically studied. Room-temperature Hall measurements showed an effective increase in the electron concentration upon both Ga and In doping and the hole concentration upon Tl doping to 7 × 10{sup 19} cm{sup –3}. No resonant doping phenomenon was observed when PbSe was doped with B, Ga, or In. The highest room-temperature power factor 2.5 × 10{sup –3} W m{sup –1} K{sup –2} was obtained for PbSe doped with 2 atom % B. However, the power factor in B-doped samples decreased with increasing temperature, opposite to the trend for the other dopants. A figure of merit (ZT) of 1.2 at 873 K was achieved in PbSe doped with 0.5 atom % Ga or In. With Tl doping, modification of the band structure around the Fermi level helped to increase the Seebeck coefficient, and the lattice thermal conductivity decreased, probably as a result of effective phonon scattering by both the heavy Tl{sup 3+} ions and the increased grain boundary density after ball milling. The highest p-type ZT value was 1.0 at 723 K.

Authors:
; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC); Solid-State Solar-Thermal Energy Conversion Center (S3TEC)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1080575
DOE Contract Number:  
SC0001299; FG02-09ER46577
Resource Type:
Journal Article
Journal Name:
Journal of the American Chemical Society
Additional Journal Information:
Journal Volume: 134; Related Information: S3TEC partners with Massachusetts Institute of Technology (lead); Boston College; Oak Ridge National Laboratory; Rensselaer Polytechnic Institute
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; solar (photovoltaic), solar (thermal), solid state lighting, phonons, thermal conductivity, thermoelectric, defects, mechanical behavior, charge transport, spin dynamics, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)

Citation Formats

Zhang, Qian, Cao, Feng, Lukas, K, Liu, W S, Esfarjani, Keivan, Opeil, C, Broido, D, Parker, David, Singh, David J., Chen, Gang, and Ren, Z. F. Study of the Thermoelectric Properties of Lead Selenide Doped with Boron, Gallium, Indium, or Thallium. United States: N. p., 2012. Web. doi:10.1021/ja307910u.
Zhang, Qian, Cao, Feng, Lukas, K, Liu, W S, Esfarjani, Keivan, Opeil, C, Broido, D, Parker, David, Singh, David J., Chen, Gang, & Ren, Z. F. Study of the Thermoelectric Properties of Lead Selenide Doped with Boron, Gallium, Indium, or Thallium. United States. doi:10.1021/ja307910u.
Zhang, Qian, Cao, Feng, Lukas, K, Liu, W S, Esfarjani, Keivan, Opeil, C, Broido, D, Parker, David, Singh, David J., Chen, Gang, and Ren, Z. F. Wed . "Study of the Thermoelectric Properties of Lead Selenide Doped with Boron, Gallium, Indium, or Thallium". United States. doi:10.1021/ja307910u.
@article{osti_1080575,
title = {Study of the Thermoelectric Properties of Lead Selenide Doped with Boron, Gallium, Indium, or Thallium},
author = {Zhang, Qian and Cao, Feng and Lukas, K and Liu, W S and Esfarjani, Keivan and Opeil, C and Broido, D and Parker, David and Singh, David J. and Chen, Gang and Ren, Z. F.},
abstractNote = {Group IIIA elements (B, Ga, In, and Tl) have been doped into PbSe for enhancement of thermoelectric properties. The electrical conductivity, Seebeck coefficient, and thermal conductivity were systematically studied. Room-temperature Hall measurements showed an effective increase in the electron concentration upon both Ga and In doping and the hole concentration upon Tl doping to 7 × 10{sup 19} cm{sup –3}. No resonant doping phenomenon was observed when PbSe was doped with B, Ga, or In. The highest room-temperature power factor 2.5 × 10{sup –3} W m{sup –1} K{sup –2} was obtained for PbSe doped with 2 atom % B. However, the power factor in B-doped samples decreased with increasing temperature, opposite to the trend for the other dopants. A figure of merit (ZT) of 1.2 at 873 K was achieved in PbSe doped with 0.5 atom % Ga or In. With Tl doping, modification of the band structure around the Fermi level helped to increase the Seebeck coefficient, and the lattice thermal conductivity decreased, probably as a result of effective phonon scattering by both the heavy Tl{sup 3+} ions and the increased grain boundary density after ball milling. The highest p-type ZT value was 1.0 at 723 K.},
doi = {10.1021/ja307910u},
journal = {Journal of the American Chemical Society},
number = ,
volume = 134,
place = {United States},
year = {2012},
month = {10}
}