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Title: Method to planarize three-dimensional structures to enable conformal electrodes

Patent ·
OSTI ID:1080310

Methods for fabricating three-dimensional PIN structures having conformal electrodes are provided, as well as the structures themselves. The structures include a first layer and an array of pillars with cavity regions between the pillars. A first end of each pillar is in contact with the first layer. A segment is formed on the second end of each pillar. The cavity regions are filled with a fill material, which may be a functional material such as a neutron sensitive material. The fill material covers each segment. A portion of the fill material is etched back to produce an exposed portion of the segment. A first electrode is deposited onto the fill material and each exposed segment, thereby forming a conductive layer that provides a common contact to each the exposed segment. A second electrode is deposited onto the first layer.

Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC52-07NA27344
Assignee:
Lawrence Livermore National Security, LLC (Livermore, CA)
Patent Number(s):
8,314,400
Application Number:
13/014,879
OSTI ID:
1080310
Country of Publication:
United States
Language:
English

References (2)

Efficiencies of coated and perforated semiconductor neutron detectors conference October 2004
6:1 aspect ratio silicon pillar based thermal neutron detector filled with B10 journal September 2008

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