Energy resolution in semiconductor gamma radiation detectors using heterojunctions and methods of use and preparation thereof
In one embodiment, a system comprises a semiconductor gamma detector material and a hole blocking layer adjacent the gamma detector material, the hole blocking layer resisting passage of holes therethrough. In another embodiment, a system comprises a semiconductor gamma detector material, and an electron blocking layer adjacent the gamma detector material, the electron blocking layer resisting passage of electrons therethrough, wherein the electron blocking layer comprises undoped HgCdTe. In another embodiment, a method comprises forming a hole blocking layer adjacent a semiconductor gamma detector material, the hole blocking layer resisting passage of holes therethrough. Additional systems and methods are also presented.
- Research Organization:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC52-07NA27344
- Assignee:
- Lawrence Livermore National Security, LLC (Livermore, CA)
- Patent Number(s):
- 8,258,482
- Application Number:
- 12/472,081
- OSTI ID:
- 1078296
- Country of Publication:
- United States
- Language:
- English
Similar Records
Coated semiconductor devices for neutron detection
Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices