skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Heat Transport in Silicon from First-principles Calculations

Authors:
; ;
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC); Solid-State Solar-Thermal Energy Conversion Center (S3TEC)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1066907
DOE Contract Number:  
SC0001299; FG02-09ER46577
Resource Type:
Journal Article
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 84; Journal Issue: 8; Related Information: S3TEC partners with Massachusetts Institute of Technology (lead); Boston College; Oak Ridge National Laboratory; Rensselaer Polytechnic Institute; Journal ID: ISSN 1098--0121
Country of Publication:
United States
Language:
English
Subject:
solar (photovoltaic), solar (thermal), solid state lighting, phonons, thermal conductivity, thermoelectric, defects, mechanical behavior, charge transport, spin dynamics, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)

Citation Formats

Esfarjani, Keivan, Chen, Gang, and Stokes, H T. Heat Transport in Silicon from First-principles Calculations. United States: N. p., 2011. Web. doi:10.1103/PhysRevB.84.085204.
Esfarjani, Keivan, Chen, Gang, & Stokes, H T. Heat Transport in Silicon from First-principles Calculations. United States. doi:10.1103/PhysRevB.84.085204.
Esfarjani, Keivan, Chen, Gang, and Stokes, H T. Tue . "Heat Transport in Silicon from First-principles Calculations". United States. doi:10.1103/PhysRevB.84.085204.
@article{osti_1066907,
title = {Heat Transport in Silicon from First-principles Calculations},
author = {Esfarjani, Keivan and Chen, Gang and Stokes, H T},
abstractNote = {},
doi = {10.1103/PhysRevB.84.085204},
journal = {Physical Review B},
issn = {1098--0121},
number = 8,
volume = 84,
place = {United States},
year = {2011},
month = {8}
}