skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Recent Advances in the Growth of Bi-Sb-Te-Se Thin Films

Abstract

Thin films of Bi₂Te₃, Sb₂Te₃ and Bi₂Se₃ have been intensively studied during the past ten years both as the best thermoelectric materials operating near room temperature and also as an excellent material with which to explore the newly-discovered form of quantum matter called topological insulators (TI). In this review, we first recapitulate the fundamental properties of bulk forms of these materials, then discuss recent progress in fabrication of thin films and superlattices of these narrowgap semiconductors, discuss their transport properties relevant to their effectiveness as thermoelectric materials, and finally give an outlook on this material system for both fundamental study and applications in thermoelectric energy conversion.

Authors:
 [1];  [1];  [1]
  1. Univ. of Michigan, Ann Arbor, MI (United States)
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC); Center for Solar and Thermal Energy Conversion (CSTEC)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1065640
DOE Contract Number:  
SC0000957
Resource Type:
Journal Article
Journal Name:
Science of Advanced Materials
Additional Journal Information:
Journal Volume: 3; Journal Issue: 4; Related Information: CSTEC partners with University of Michigan (lead); Kent State University; Journal ID: ISSN 1947-2935
Publisher:
American Scientific Publishers
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; solar (photovoltaic), solar (thermal), phonons, thermal conductivity, thermoelectric, electrodes - solar, defects, charge transport, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly)

Citation Formats

Wang, Guoyu, Endicott, Lynn, and Uher, Ctirad. Recent Advances in the Growth of Bi-Sb-Te-Se Thin Films. United States: N. p., 2011. Web. doi:10.1166/sam.2011.1182.
Wang, Guoyu, Endicott, Lynn, & Uher, Ctirad. Recent Advances in the Growth of Bi-Sb-Te-Se Thin Films. United States. doi:10.1166/sam.2011.1182.
Wang, Guoyu, Endicott, Lynn, and Uher, Ctirad. Mon . "Recent Advances in the Growth of Bi-Sb-Te-Se Thin Films". United States. doi:10.1166/sam.2011.1182.
@article{osti_1065640,
title = {Recent Advances in the Growth of Bi-Sb-Te-Se Thin Films},
author = {Wang, Guoyu and Endicott, Lynn and Uher, Ctirad},
abstractNote = {Thin films of Bi₂Te₃, Sb₂Te₃ and Bi₂Se₃ have been intensively studied during the past ten years both as the best thermoelectric materials operating near room temperature and also as an excellent material with which to explore the newly-discovered form of quantum matter called topological insulators (TI). In this review, we first recapitulate the fundamental properties of bulk forms of these materials, then discuss recent progress in fabrication of thin films and superlattices of these narrowgap semiconductors, discuss their transport properties relevant to their effectiveness as thermoelectric materials, and finally give an outlook on this material system for both fundamental study and applications in thermoelectric energy conversion.},
doi = {10.1166/sam.2011.1182},
journal = {Science of Advanced Materials},
issn = {1947-2935},
number = 4,
volume = 3,
place = {United States},
year = {2011},
month = {8}
}