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Title: Epitaxial growth of three-dimensionally architectured optoelectronic devices

Abstract

Optoelectronic devices have long benefited from structuring in multiple dimensions on microscopic length scales. However, preserving crystal epitaxy, a general necessity for good optoelectronic properties, while imparting a complex three-dimensional structure remains a significant challenge. Three-dimensional (3D) photonic crystals are one class of materials where epitaxy of 3D structures would enable new functionalities. Many 3D photonic crystal devices have been proposed, including zero-threshold lasers, low-loss waveguides, high-efficiency light-emitting diodes (LEDs) and solar cells, but have generally not been realized because of material limitations. Exciting concepts in metamaterials, including negative refraction and cloaking, could be made practical using 3D structures that incorporate electrically pumped gain elements to balance the inherent optical loss of such devices. Here we demonstrate the 3D-template-directed epitaxy of group III–V materials, which enables formation of 3D structured optoelectronic devices. We illustrate the power of this technique by fabricating an electrically driven 3D photonic crystal LED.

Authors:
 [1];  [1];  [2];  [1];  [2];  [3];  [4];  [1];  [2];  [2];  [1]
  1. Univ. Of Illinois, Urbana, IL (United States)
  2. Univ. of Illinois, Urbana, IL (United States)
  3. Kyoto Univ., Kyoto (Japan)
  4. Univ. of California, Santa Barbara, CA (United States)
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC); Light-Material Interactions in Energy Conversion (LMI)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Contributing Org.:
Beckman Institute Univ. Of Illinois, Urbana, IL (United States); Frederick Seitz Materials Research Laboratory, Univ. Of Illinois, Urbana, IL (United States)
OSTI Identifier:
1065610
DOE Contract Number:  
SC0001293
Resource Type:
Journal Article
Journal Name:
Nature Materials
Additional Journal Information:
Journal Volume: 10; Journal Issue: 9; Related Information: LMI partners with California Institute of Technology (lead); Harvard University; University of Illinois, Urbana-Champaign; Lawrence Berkeley National Laboratory
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; solar (photovoltaic), solid state lighting, phonons, thermal conductivity, electrodes - solar, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly)

Citation Formats

Nelson, Erik C., Dias, Neville L., Bassett, Kevin P., Dunham, Simon N., Verma, Varun, Miyake, Masao, Wiltzius, Pierre, Rogers, John A., Coleman, James J., Li, Xiuling, and Braun, Paul V. Epitaxial growth of three-dimensionally architectured optoelectronic devices. United States: N. p., 2011. Web. doi:10.1038/nmat3071.
Nelson, Erik C., Dias, Neville L., Bassett, Kevin P., Dunham, Simon N., Verma, Varun, Miyake, Masao, Wiltzius, Pierre, Rogers, John A., Coleman, James J., Li, Xiuling, & Braun, Paul V. Epitaxial growth of three-dimensionally architectured optoelectronic devices. United States. doi:10.1038/nmat3071.
Nelson, Erik C., Dias, Neville L., Bassett, Kevin P., Dunham, Simon N., Verma, Varun, Miyake, Masao, Wiltzius, Pierre, Rogers, John A., Coleman, James J., Li, Xiuling, and Braun, Paul V. Sun . "Epitaxial growth of three-dimensionally architectured optoelectronic devices". United States. doi:10.1038/nmat3071.
@article{osti_1065610,
title = {Epitaxial growth of three-dimensionally architectured optoelectronic devices},
author = {Nelson, Erik C. and Dias, Neville L. and Bassett, Kevin P. and Dunham, Simon N. and Verma, Varun and Miyake, Masao and Wiltzius, Pierre and Rogers, John A. and Coleman, James J. and Li, Xiuling and Braun, Paul V.},
abstractNote = {Optoelectronic devices have long benefited from structuring in multiple dimensions on microscopic length scales. However, preserving crystal epitaxy, a general necessity for good optoelectronic properties, while imparting a complex three-dimensional structure remains a significant challenge. Three-dimensional (3D) photonic crystals are one class of materials where epitaxy of 3D structures would enable new functionalities. Many 3D photonic crystal devices have been proposed, including zero-threshold lasers, low-loss waveguides, high-efficiency light-emitting diodes (LEDs) and solar cells, but have generally not been realized because of material limitations. Exciting concepts in metamaterials, including negative refraction and cloaking, could be made practical using 3D structures that incorporate electrically pumped gain elements to balance the inherent optical loss of such devices. Here we demonstrate the 3D-template-directed epitaxy of group III–V materials, which enables formation of 3D structured optoelectronic devices. We illustrate the power of this technique by fabricating an electrically driven 3D photonic crystal LED.},
doi = {10.1038/nmat3071},
journal = {Nature Materials},
number = 9,
volume = 10,
place = {United States},
year = {2011},
month = {7}
}