High-temperature thermoelectric performance of heavily doped PbSe

Parker, David; Singh, David J.

doi:10.1103/PhysRevB.82.035204

Title: High-temperature thermoelectric performance of heavily doped PbSe

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Abstract

We present a model calculation, employing first-principles calculations as well as empirical data, which suggests that properly hole-doped bulk PbSe may show a Seebeck coefficient as high as 230 μV/K, in a temperature regime in which the lattice thermal conductivity is rather small. It may therefore show a figure-of-merit ZT as high as 2 for temperatures of 1000 K. Heavily doped p-type PbSe may offer better thermoelectric performance than the sister material, optimized PbTe, for high-temperature applications such as power generation.

Authors:

Parker, David ^[1]; Singh, David J. ^[1]

Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Publication Date:: Thu Jul 08 00:00:00 EDT 2010

Research Org.:: Energy Frontier Research Centers (EFRC) (United States). Solid-State Solar-Thermal Energy Conversion Center (S3TEC)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1065413

DOE Contract Number:: SC0001299; FG02-09ER46577

Resource Type:: Journal Article

Journal Name:: Phys. Rev. B

Additional Journal Information:: Journal Volume: 82; Journal Issue: 3; Related Information: S3TEC partners with Massachusetts Institute of Technology (lead); Boston College; Oak Ridge National Laboratory; Rensselaer Polytechnic Institute; Journal ID: ISSN 1098--0121

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; solar (photovoltaic), solar (thermal), solid state lighting, phonons, thermal conductivity, thermoelectric, defects, mechanical behavior, charge transport, spin dynamics, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)

Citation Formats


                    Parker, David, and Singh, David J. High-temperature thermoelectric performance of heavily doped PbSe.  United States: N. p., 2010. 
        Web.  doi:10.1103/PhysRevB.82.035204.

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                    Parker, David, & Singh, David J. High-temperature thermoelectric performance of heavily doped PbSe.  United States.  https://doi.org/10.1103/PhysRevB.82.035204

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                    Parker, David, and Singh, David J. 2010.  
        "High-temperature thermoelectric performance of heavily doped PbSe".  United States.  https://doi.org/10.1103/PhysRevB.82.035204.

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@article{osti_1065413,

  title        = {High-temperature thermoelectric performance of heavily doped PbSe},

  author       = {Parker, David and Singh, David J.},

  abstractNote = {We present a model calculation, employing first-principles calculations as well as empirical data, which suggests that properly hole-doped bulk PbSe may show a Seebeck coefficient as high as 230 μV/K, in a temperature regime in which the lattice thermal conductivity is rather small. It may therefore show a figure-of-merit ZT as high as 2 for temperatures of 1000 K. Heavily doped p-type PbSe may offer better thermoelectric performance than the sister material, optimized PbTe, for high-temperature applications such as power generation.},

  doi          = {10.1103/PhysRevB.82.035204},

  url          = {https://www.osti.gov/biblio/1065413},
  journal      = {Phys. Rev. B},

  issn         = {1098--0121},

  number       = 3,

  volume       = 82,

  place        = {United States},

  year         = {Thu Jul 08 00:00:00 EDT 2010},

  month        = {Thu Jul 08 00:00:00 EDT 2010}

}

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