Role of strain in polarization switching in semipolar InGaN/GaN quantum wells

Journal Article · Tue Nov 02 00:00:00 EDT 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3507289· OSTI ID:1064976

Yan, Qimin ^[1]; Rinke, Patrick ^[2]; Scheffler, Matthias ^[2]; Van de Walle, Chris G. ^[1]

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1. Univ. of California, Santa Barbara, CA (United States)
2. Univ. of California, Santa Barbara, CA (United States); Frizt-Haber-Institut der Max-Planck-Gesellschaft (Germany)

The effect of strain on the valence-band structure of (112¯2) semipolar InGaN grown on GaN substrates is studied. A k·p analysis reveals that anisotropic strain in the c -plane and shear strain are crucial for deciding the ordering of the two topmost valence bands. The shear-strain deformation potential D₆ is calculated for GaN and InN using density functional theory with the Heyd–Scuseria–Ernzerhof hybrid functional [J. Heyd, G. E. Scuseria, and M. Ernzerhof, J. Chem. Phys.124, 219906 (2006)]. Using our deformation potentials and assuming a pseudomorphically strained structure, no polarization switching is observed. We investigate the role of partial strain relaxation in the observed polarization switching.

• Research Organization: Energy Frontier Research Centers (EFRC) (United States). Center for Energy Efficient Materials (CEEM)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES)
• DOE Contract Number: SC0001009
• OSTI ID: 1064976
• Journal Information: Applied Physics Letters, Vol. 97; Related Information: CEEM partners with the University of California, Santa Barbara (lead); Purdue University; Los Alamos National Laboratory; National Renewable Energy Laboratory; ISSN 0003-6951
• Publisher: American Institute of Physics (AIP)
• Country of Publication: United States
• Language: English

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