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Title: Interface enabled defects reduction in helium ion irradiated Cu/V nanolayers

Abstract

Sputter-deposited Cu/V nanolayer films with individual layer thickness, h, varying from 1 to 200 nm were subjected to helium (He) ion irradiation at room temperature. At a peak dose level of 6 displacements per atom (dpa), the average helium bubble density and lattice expansion decrease significantly with decreasing h. The magnitude of radiation hardening decreases with decreasing individual layer thickness, and becomes negligible when h is 2.5 nm or less. This study indicates that nearly immiscible Cu/V interfaces spaced a few nm apart can effectively reduce the concentration of radiation induced point defects. Consequently, Cu/V nanolayers possess enhanced radiation tolerance, i.e., reduction of swelling and suppression of radiation hardening, compared to monolithic Cu or V.

Authors:
; ; ;
Research Org.:
Energy Frontier Research Centers (EFRC); Center for Materials at Irradiation and Mechanical Extremes (CMIME)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1064945
DOE Contract Number:  
2008LANL1026
Resource Type:
Journal Article
Journal Name:
Journal of Nuclear Materials
Additional Journal Information:
Journal Volume: 407; Journal Issue: 3; Related Information: CMIME partners with Los Alamos National Laboratory (lead); Carnegie Mellon University; University of Illinois, Urbana Champaign; Massachusetts Institute of Technology; University of Nebraska; Journal ID: ISSN 0022-3115
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; nuclear (including radiation effects), defects, mechanical behavior, materials and chemistry by design, synthesis (novel materials), synthesis (scalable processing)

Citation Formats

Fu, E G, Misra, A, Wang, H, and Zhang, X. Interface enabled defects reduction in helium ion irradiated Cu/V nanolayers. United States: N. p., Web. doi:10.1016/j.jnucmat.2010.10.011.
Fu, E G, Misra, A, Wang, H, & Zhang, X. Interface enabled defects reduction in helium ion irradiated Cu/V nanolayers. United States. doi:10.1016/j.jnucmat.2010.10.011.
Fu, E G, Misra, A, Wang, H, and Zhang, X. . "Interface enabled defects reduction in helium ion irradiated Cu/V nanolayers". United States. doi:10.1016/j.jnucmat.2010.10.011.
@article{osti_1064945,
title = {Interface enabled defects reduction in helium ion irradiated Cu/V nanolayers},
author = {Fu, E G and Misra, A and Wang, H and Zhang, X},
abstractNote = {Sputter-deposited Cu/V nanolayer films with individual layer thickness, h, varying from 1 to 200 nm were subjected to helium (He) ion irradiation at room temperature. At a peak dose level of 6 displacements per atom (dpa), the average helium bubble density and lattice expansion decrease significantly with decreasing h. The magnitude of radiation hardening decreases with decreasing individual layer thickness, and becomes negligible when h is 2.5 nm or less. This study indicates that nearly immiscible Cu/V interfaces spaced a few nm apart can effectively reduce the concentration of radiation induced point defects. Consequently, Cu/V nanolayers possess enhanced radiation tolerance, i.e., reduction of swelling and suppression of radiation hardening, compared to monolithic Cu or V.},
doi = {10.1016/j.jnucmat.2010.10.011},
journal = {Journal of Nuclear Materials},
issn = {0022-3115},
number = 3,
volume = 407,
place = {United States},
year = {},
month = {}
}