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Title: Direct determination of the electronic structure of the poly(3-hexylthiophene):phenyl-[6,6]-C61 butyric acid methyl ester blend

Abstract

This article focuses on the electronic structure of the poly(3-hexylthiophene):phenyl-[6,6]-C61 butyric acid methyl ester (P3HT:PCBM) blend, widely used in bulk heterojunction (BHJ) solar cells. Given the fact that the surface of the blend film is a nearly pure P3HT wetting layer, we use a lift-off method to access the originally buried surface, which is rich in both P3HT and PCBM and thus representative of the BHJ. The combination of direct and inverse photoemission spectroscopy on this surface leads to a determination of the energy gap between the lowest unoccupied molecular orbital (LUMO) of the acceptor and the highest occupied molecular orbital (HOMO) of the donor. The gap is ~1.4 eV, which implies a 0.5–0.6 eV interface dipole barrier between the two materials. The energy gap is found to be stable versus in situ annealing up to 100 °C.

Authors:
 [1];  [1];  [1];  [2];  [2];  [1];  [1]
  1. Princeton Univ., NJ (United States)
  2. National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States)
Research Org.:
Energy Frontier Research Centers (EFRC); Center for Interface Science: Solar Electric Materials (CISSEM)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1064773
DOE Contract Number:  
SC0001084
Resource Type:
Journal Article
Journal Name:
Org. Electron.
Additional Journal Information:
Journal Volume: 11; Journal Issue: 11; Related Information: CISSEM partners with the University of Arizona (lead); Georgia Institute of Technology; National Renewable Energy Laboratory; Princeton University; University of Washington
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; solar (photovoltaic), electrodes - solar, charge transport, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)

Citation Formats

Guan, Ze-Lei, Kim, Jong Bok, Wang, He, Jaye, Cherno, Fischer, Daniel A., Loo, Yueh-Lin, and Kahn, Antoine. Direct determination of the electronic structure of the poly(3-hexylthiophene):phenyl-[6,6]-C61 butyric acid methyl ester blend. United States: N. p., Web. doi:10.1016/j.orgel.2010.07.023.
Guan, Ze-Lei, Kim, Jong Bok, Wang, He, Jaye, Cherno, Fischer, Daniel A., Loo, Yueh-Lin, & Kahn, Antoine. Direct determination of the electronic structure of the poly(3-hexylthiophene):phenyl-[6,6]-C61 butyric acid methyl ester blend. United States. doi:10.1016/j.orgel.2010.07.023.
Guan, Ze-Lei, Kim, Jong Bok, Wang, He, Jaye, Cherno, Fischer, Daniel A., Loo, Yueh-Lin, and Kahn, Antoine. . "Direct determination of the electronic structure of the poly(3-hexylthiophene):phenyl-[6,6]-C61 butyric acid methyl ester blend". United States. doi:10.1016/j.orgel.2010.07.023.
@article{osti_1064773,
title = {Direct determination of the electronic structure of the poly(3-hexylthiophene):phenyl-[6,6]-C61 butyric acid methyl ester blend},
author = {Guan, Ze-Lei and Kim, Jong Bok and Wang, He and Jaye, Cherno and Fischer, Daniel A. and Loo, Yueh-Lin and Kahn, Antoine},
abstractNote = {This article focuses on the electronic structure of the poly(3-hexylthiophene):phenyl-[6,6]-C61 butyric acid methyl ester (P3HT:PCBM) blend, widely used in bulk heterojunction (BHJ) solar cells. Given the fact that the surface of the blend film is a nearly pure P3HT wetting layer, we use a lift-off method to access the originally buried surface, which is rich in both P3HT and PCBM and thus representative of the BHJ. The combination of direct and inverse photoemission spectroscopy on this surface leads to a determination of the energy gap between the lowest unoccupied molecular orbital (LUMO) of the acceptor and the highest occupied molecular orbital (HOMO) of the donor. The gap is ~1.4 eV, which implies a 0.5–0.6 eV interface dipole barrier between the two materials. The energy gap is found to be stable versus in situ annealing up to 100 °C.},
doi = {10.1016/j.orgel.2010.07.023},
journal = {Org. Electron.},
number = 11,
volume = 11,
place = {United States},
year = {},
month = {}
}