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Title: First-principles defect chemistry in C-doped GaAs.

Authors:
Publication Date:
Research Org.:
Sandia National Laboratories
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1063559
Report Number(s):
SAND2012-10077C
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the 2o12 MRS Fall Meeting held November 25-30, 2012 in Boston, MA.
Country of Publication:
United States
Language:
English

Citation Formats

Schultz, Peter A. First-principles defect chemistry in C-doped GaAs.. United States: N. p., 2012. Web.
Schultz, Peter A. First-principles defect chemistry in C-doped GaAs.. United States.
Schultz, Peter A. Thu . "First-principles defect chemistry in C-doped GaAs.". United States.
@article{osti_1063559,
title = {First-principles defect chemistry in C-doped GaAs.},
author = {Schultz, Peter A.},
abstractNote = {},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2012},
month = {11}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

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