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Title: Large Scale First-Principles Simulations of Point Defect Behavior in Crystalline Silicon.

Authors:
Publication Date:
Research Org.:
Sandia National Laboratories
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1063508
Report Number(s):
SAND2012-9968C
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the Sixth International Symposium on Advanced Science and Technology of Silicon Materials held November 19-23, 2012 in Kona, HI.
Country of Publication:
United States
Language:
English

Citation Formats

Modine, Normand A. Large Scale First-Principles Simulations of Point Defect Behavior in Crystalline Silicon.. United States: N. p., 2012. Web.
Modine, Normand A. Large Scale First-Principles Simulations of Point Defect Behavior in Crystalline Silicon.. United States.
Modine, Normand A. Thu . "Large Scale First-Principles Simulations of Point Defect Behavior in Crystalline Silicon.". United States.
@article{osti_1063508,
title = {Large Scale First-Principles Simulations of Point Defect Behavior in Crystalline Silicon.},
author = {Modine, Normand A.},
abstractNote = {},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2012},
month = {11}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

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