Smooth electrode and method of fabricating same
Patent
·
OSTI ID:1063201
- Northville, NY
- Albany, NY
- Niskayuna, NY
A smooth electrode is provided. The smooth electrode includes at least one metal layer having thickness greater than about 1 micron; wherein an average surface roughness of the smooth electrode is less than about 10 nm.
- Research Organization:
- National Energy Technology Laboratory (NETL), Pittsburgh, PA, and Morgantown, WV (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FC26-04NT42324
- Assignee:
- General Electric Company (Niskayuna, NY)
- Patent Number(s):
- 8,242,006
- Application Number:
- 11/962,494
- OSTI ID:
- 1063201
- Country of Publication:
- United States
- Language:
- English
Through-wafer copper electroplating for three-dimensional interconnects
|
journal | June 2002 |
A novel electrically conductive wafer through hole filled vias interconnect for 3D MEMS packaging
|
conference | May 2003 |
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