Asymmetry in Charge Sensing for Silicon MOS Double Quantum Dot with Finite Bias.
Conference
·
OSTI ID:1062789
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1062789
- Report Number(s):
- SAND2012-0442C
- Resource Relation:
- Conference: Proposed for presentation at the Silicon Workshop 2012 held February 13-17, 2012 in Sydney, Australia.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Asymmetry in Charge Sensing for Silicon MOS Double Quantum Dot with Finite Bias.
Asymmetry in Charge Sensing for Silicon MOS Double Quantum Dot with Finite Bias.
Reweighting of charge occupation incharge stability diagrams due to finite temperature effect and asymmetric tunnel ratesin a silicon MOS double quantum dot.
Conference
·
Wed Feb 01 00:00:00 EST 2012
·
OSTI ID:1062789
+10 more
Asymmetry in Charge Sensing for Silicon MOS Double Quantum Dot with Finite Bias.
Conference
·
Wed Aug 01 00:00:00 EDT 2012
·
OSTI ID:1062789
+11 more
Reweighting of charge occupation incharge stability diagrams due to finite temperature effect and asymmetric tunnel ratesin a silicon MOS double quantum dot.
Conference
·
Fri Mar 01 00:00:00 EST 2013
·
OSTI ID:1062789
+8 more