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Title: Design of Twin Structures in SiC Nanowires

Abstract

With covalent bonding, SiC has high mechanical strength and a large energy gap in electronic band structure. Nanoscale SiC, in the form of nanowires, has increased mechanical toughness and variable band gaps. Further, introduction of twin boundaries into cubic SiC nanowires can result in improvement in both mechanical and electronic properties. This review presents effects of twin boundaries on properties of cubic SiC nanowires, including mechanical and electronic properties. Further, this review presents recent developments in introducing twin boundaries into cubic SiC nanowires, controllably and uncontrollably.

Authors:
;
Publication Date:
Research Org.:
Idaho National Laboratory (INL)
Sponsoring Org.:
USDOE
OSTI Identifier:
1060956
Report Number(s):
INL/JOU-13-28229
Journal ID: ISSN 1546-1955
DOE Contract Number:  
DE-AC07-05ID14517
Resource Type:
Journal Article
Journal Name:
Journal of Computational and Theoretical Nanonscience
Additional Journal Information:
Journal Volume: 9; Journal Issue: 11; Journal ID: ISSN 1546-1955
Country of Publication:
United States
Language:
English
Subject:
99 GENERAL AND MISCELLANEOUS; electronic property; mechanical property; nanowire; silicon carbide; twin boundary

Citation Formats

Yongfeng Zhang, and Hanchen Huang. Design of Twin Structures in SiC Nanowires. United States: N. p., 2012. Web. doi:10.1166/jctn.2012.2603.
Yongfeng Zhang, & Hanchen Huang. Design of Twin Structures in SiC Nanowires. United States. doi:10.1166/jctn.2012.2603.
Yongfeng Zhang, and Hanchen Huang. Thu . "Design of Twin Structures in SiC Nanowires". United States. doi:10.1166/jctn.2012.2603.
@article{osti_1060956,
title = {Design of Twin Structures in SiC Nanowires},
author = {Yongfeng Zhang and Hanchen Huang},
abstractNote = {With covalent bonding, SiC has high mechanical strength and a large energy gap in electronic band structure. Nanoscale SiC, in the form of nanowires, has increased mechanical toughness and variable band gaps. Further, introduction of twin boundaries into cubic SiC nanowires can result in improvement in both mechanical and electronic properties. This review presents effects of twin boundaries on properties of cubic SiC nanowires, including mechanical and electronic properties. Further, this review presents recent developments in introducing twin boundaries into cubic SiC nanowires, controllably and uncontrollably.},
doi = {10.1166/jctn.2012.2603},
journal = {Journal of Computational and Theoretical Nanonscience},
issn = {1546-1955},
number = 11,
volume = 9,
place = {United States},
year = {2012},
month = {11}
}