skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Axial SiGe Heteronanowire Tunneling Field-Effect Transistors

Abstract

We present silicon-compatible tri-gated p-Ge/i-Si/n-Si axial heteronanowire tunneling field-effect transistors (TFETs), where on-state tunneling occurs in the Ge drain section, while off-state leakage is dominated by the Si junction in the source. Our TFETs have high ION ~ 2 µA/µm, fully suppressed ambipolarity, and a sub-threshold slope SS ~ 140 mV/decade over 4 decades of current with lowest SS ~ 50 mV/decade. Device operation in the tunneling mode is confirmed by three-dimensional TCAD simulation. Interestingly, in addition to the TFET mode, our devices work as standard nanowire FETs with good ION/IOFF ratio when the source-drain junction is forward-biased. The improved transport in both biasing modes confirms the benefits of utilizing bandgap engineered axial nanowires for enhancing device performance.

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
Sponsoring Org.:
USDOE
OSTI Identifier:
1059189
Report Number(s):
PNNL-SA-91732
47607; KP1704020
DOE Contract Number:  
AC05-76RL01830
Resource Type:
Journal Article
Journal Name:
Nano Letters, 12(11):5850-5855
Additional Journal Information:
Journal Name: Nano Letters, 12(11):5850-5855
Country of Publication:
United States
Language:
English
Subject:
SiGe hetero-nanowire, tunneling field effect transistor, axial heterojunction, VLS growth; Environmental Molecular Sciences Laboratory

Citation Formats

Le, Son T., Jannaty, P., Luo, Xu, Zaslavsky, A., Perea, Daniel E., Dayeh, Shadi A., and Picraux, Samuel T. Axial SiGe Heteronanowire Tunneling Field-Effect Transistors. United States: N. p., 2012. Web. doi:10.1021/nl3032058.
Le, Son T., Jannaty, P., Luo, Xu, Zaslavsky, A., Perea, Daniel E., Dayeh, Shadi A., & Picraux, Samuel T. Axial SiGe Heteronanowire Tunneling Field-Effect Transistors. United States. doi:10.1021/nl3032058.
Le, Son T., Jannaty, P., Luo, Xu, Zaslavsky, A., Perea, Daniel E., Dayeh, Shadi A., and Picraux, Samuel T. Wed . "Axial SiGe Heteronanowire Tunneling Field-Effect Transistors". United States. doi:10.1021/nl3032058.
@article{osti_1059189,
title = {Axial SiGe Heteronanowire Tunneling Field-Effect Transistors},
author = {Le, Son T. and Jannaty, P. and Luo, Xu and Zaslavsky, A. and Perea, Daniel E. and Dayeh, Shadi A. and Picraux, Samuel T.},
abstractNote = {We present silicon-compatible tri-gated p-Ge/i-Si/n-Si axial heteronanowire tunneling field-effect transistors (TFETs), where on-state tunneling occurs in the Ge drain section, while off-state leakage is dominated by the Si junction in the source. Our TFETs have high ION ~ 2 µA/µm, fully suppressed ambipolarity, and a sub-threshold slope SS ~ 140 mV/decade over 4 decades of current with lowest SS ~ 50 mV/decade. Device operation in the tunneling mode is confirmed by three-dimensional TCAD simulation. Interestingly, in addition to the TFET mode, our devices work as standard nanowire FETs with good ION/IOFF ratio when the source-drain junction is forward-biased. The improved transport in both biasing modes confirms the benefits of utilizing bandgap engineered axial nanowires for enhancing device performance.},
doi = {10.1021/nl3032058},
journal = {Nano Letters, 12(11):5850-5855},
number = ,
volume = ,
place = {United States},
year = {2012},
month = {10}
}