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Title: High quality transparent conducting oxide thin films

Patent ·
OSTI ID:1058907
 [1];  [2];  [3];  [2]
  1. Conifer, CO
  2. Golden, CO
  3. Evergreen, CO
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A transparent conducting oxide (TCO) film comprising: a TCO layer, and dopants selected from the elements consisting of Vanadium, Molybdenum, Tantalum, Niobium, Antimony, Titanium, Zirconium, and Hafnium, wherein the elements are n-type dopants; and wherein the transparent conducting oxide is characterized by an improved electron mobility of about 42 cm.sup.2/V-sec while simultaneously maintaining a high carrier density of .about.4.4e.times.10.sup.20 cm.sup.-3.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC36-99GO10337
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
Patent Number(s):
8,253,012
Application Number:
12/441,707
OSTI ID:
1058907
Country of Publication:
United States
Language:
English

References (5)

New transparent conducting thin films using multicomponent oxides composed of ZnO and V2O5 prepared by magnetron sputtering journal May 2002
Growth of p-type ZnO thin films by (N, Ga) co-doping using DMHy dopant journal July 2007
Donor–acceptor pair luminescence in nitrogen-doped ZnO films grown on lattice-matched ScAlMgO4 (0001) substrates journal July 2003
A Comparative Study of MOCVD Produced ZnO Films Doped with N, As, P and Sb journal January 2006
Properties of p-Type ZnO Grown by Oxidation of Zn-Group-V Compounds journal January 2006

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