High-temperature treatment of In-doped CZT crystals grown by the high-pressure Bridgman method
We evaluated the effect of high-temperature treatment of Cd0.9Zn0.1Te:In single crystals using Hall-effect measurements, medium- and high-temperature annealing under various deviations from stoichiometry, and infra-red (IR) transmission microscopy Annealing at ~730 K sharply increased the electrical conductivity (by ~1-2 orders-of-magnitude). Plots of the temperature- and cadmium-pressure dependences of the electrical conductivity, carrier concentration, and mobility were obtained. Treating previously annealed Cd-samples under a Te overpressure at 1070 K allowed us to restore their resistance to its initial high values. The main difference in comparing this material with CdTe was its lowered electron density. We explained our results within the framework of Kröger’s theory of quasi-chemical reactions between point defects in solids.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE SC OFFICE OF SCIENCE (SC)
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 1056421
- Report Number(s):
- BNL-98466-2012-CP; NN2001000
- Resource Relation:
- Conference: 2012 SPIE Optics and Photonics Conference; San Diego, CA; 20120812 through 20120816
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effect of Cd 0.9 An 0.1 Te: In Crystals Annealing on Their High-Temperature Electrical Properties
Analysis of CZT crystals and detectors grown in Russia and the Ukraine by high-pressure Bridgman methods