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Title: Radiation effects of n-type, low resistivity, spiral silicon drift detector hybrid systems

Abstract

We have developed a new thin-window, n-type, low-resistivity, spiral silicon drift detector (SDD) array - to be used as an extraterrestrial X-ray spectrometer (in varying environments) for NASA. To achieve low-energy response, a thin SDD entrance window was produced using a previously developed method. These thin-window devices were also produced on lower resistivity, thinner, n-type, silicon material, effectively ensuring their radiation hardness in anticipation of operation in potentially harsh radiation environments (such as found around the Jupiter system). Using the Indiana University Cyclotron Facility beam line RERS1, we irradiated a set of suitable diodes up to 5 Mrad and the latest iteration of our ASICs up to 12 Mrad. Then we irradiated two hybrid detectors consisting of newly, such-produced in-house (BNL) SDD chips bonded with ASICs with doses of 0.25 Mrad and 1 Mrad. Also we irradiated another hybrid detector consisting of previously produced (by KETEK) on n-type, high-resistivity SDD chip bonded with BNL's ASICs with a dose of 1 Mrad. The measurement results of radiated diodes (up to 5 Mrad), ASICs (up to 12 Mrad) and hybrid detectors (up to 1 Mrad) are presented here.

Authors:
; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
BROOKHAVEN NATIONAL LABORATORY (BNL)
Sponsoring Org.:
USDOE SC OFFICE OF HIGH ENERGY PHYSICS
OSTI Identifier:
1054610
Report Number(s):
BNL-96969-2012-JA
Journal ID: ISSN 1082, ISBN 978-1-4673-0120-6
DOE Contract Number:  
DE-AC02-98CH10886
Resource Type:
Journal Article
Journal Name:
2011 IEEE Nuclear Science Symposium Conference Record
Additional Journal Information:
Journal Volume: 2011; Journal Issue: none; Conference: Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2011 IEEE, Valencia (Spain), 23-29 Oct. 2011; Journal ID: ISSN 1082
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS; radiation effects; low resistivity; spiral silicon drift detector; application specific integrated circuits; silicon radiation detectors; ASIC iteration; Indiana University Cyclotron Facility; RERS1 beam line; extraterrestrial X-ray spectrometer; harsh radiation environments; high-resistivity SDD chip; hybrid detectors; n-type radiation effects; radiation hardness; silicon drift detector; silicon material; spiral SDD array; spiral hybrid systems; thin-window devices; Annealing; CMOS integrated circuits; Irrigation; Noise; Noise measurement; Protons; Temperature measurement

Citation Formats

Chen, W., Carini, G. A., De Geronimo, G., Gaskin, J. A., Keister, J. W., Li, S., Li, Z., Ramsey, B. D., Siddons, D. P., Smith, G. C., and Verbitskaya, E. Radiation effects of n-type, low resistivity, spiral silicon drift detector hybrid systems. United States: N. p., 2011. Web. doi:10.1109/NSSMIC.2011.6154663.
Chen, W., Carini, G. A., De Geronimo, G., Gaskin, J. A., Keister, J. W., Li, S., Li, Z., Ramsey, B. D., Siddons, D. P., Smith, G. C., & Verbitskaya, E. Radiation effects of n-type, low resistivity, spiral silicon drift detector hybrid systems. United States. doi:10.1109/NSSMIC.2011.6154663.
Chen, W., Carini, G. A., De Geronimo, G., Gaskin, J. A., Keister, J. W., Li, S., Li, Z., Ramsey, B. D., Siddons, D. P., Smith, G. C., and Verbitskaya, E. Sat . "Radiation effects of n-type, low resistivity, spiral silicon drift detector hybrid systems". United States. doi:10.1109/NSSMIC.2011.6154663.
@article{osti_1054610,
title = {Radiation effects of n-type, low resistivity, spiral silicon drift detector hybrid systems},
author = {Chen, W. and Carini, G. A. and De Geronimo, G. and Gaskin, J. A. and Keister, J. W. and Li, S. and Li, Z. and Ramsey, B. D. and Siddons, D. P. and Smith, G. C. and Verbitskaya, E.},
abstractNote = {We have developed a new thin-window, n-type, low-resistivity, spiral silicon drift detector (SDD) array - to be used as an extraterrestrial X-ray spectrometer (in varying environments) for NASA. To achieve low-energy response, a thin SDD entrance window was produced using a previously developed method. These thin-window devices were also produced on lower resistivity, thinner, n-type, silicon material, effectively ensuring their radiation hardness in anticipation of operation in potentially harsh radiation environments (such as found around the Jupiter system). Using the Indiana University Cyclotron Facility beam line RERS1, we irradiated a set of suitable diodes up to 5 Mrad and the latest iteration of our ASICs up to 12 Mrad. Then we irradiated two hybrid detectors consisting of newly, such-produced in-house (BNL) SDD chips bonded with ASICs with doses of 0.25 Mrad and 1 Mrad. Also we irradiated another hybrid detector consisting of previously produced (by KETEK) on n-type, high-resistivity SDD chip bonded with BNL's ASICs with a dose of 1 Mrad. The measurement results of radiated diodes (up to 5 Mrad), ASICs (up to 12 Mrad) and hybrid detectors (up to 1 Mrad) are presented here.},
doi = {10.1109/NSSMIC.2011.6154663},
journal = {2011 IEEE Nuclear Science Symposium Conference Record},
issn = {1082},
number = none,
volume = 2011,
place = {United States},
year = {2011},
month = {10}
}