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Title: Characterization of Mo/Si multilayer growth on stepped topographies

Abstract

Mo/Si multilayer mirrors with nanoscale bilayer thicknesses have been deposited on stepped substrate topographies, using various deposition angles. The multilayer morphology at the stepedge region was studied by cross section transmission electron microscopy. A transition from a continuous- to columnar layer morphology is observed near the step-edge, as a function of the local angle of incidence of the deposition flux. Taking into account the corresponding kinetics and anisotropy in layer growth, a continuum model has been developed to give a detailed description of the height profiles of the individual continuous layers. Complementary optical characterization of the multilayer system using a microscope operating in the extreme ultraviolet wavelength range, revealed that the influence of the step-edge on the planar multilayer structure is restricted to a region within 300 nm from the step-edge.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
Materials Sciences Division
OSTI Identifier:
1051628
Report Number(s):
LBNL-5139E
Journal ID: ISSN 1071-1023
DOE Contract Number:  
DE-AC02-05CH11231
Resource Type:
Journal Article
Journal Name:
Journal of vacuum science & technology. B, Microelectronics and nanometer structures
Additional Journal Information:
Journal Volume: 29; Journal Issue: 5; Related Information: Journal Publication Date: 051803-1; Journal ID: ISSN 1071-1023
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Boogaard, A. J. R. vcan den, Louis, E., Zoethout, E., Goldberg, K. A., and Bijkerk, F. Characterization of Mo/Si multilayer growth on stepped topographies. United States: N. p., 2011. Web. doi:10.1116/1.3628640.
Boogaard, A. J. R. vcan den, Louis, E., Zoethout, E., Goldberg, K. A., & Bijkerk, F. Characterization of Mo/Si multilayer growth on stepped topographies. United States. doi:10.1116/1.3628640.
Boogaard, A. J. R. vcan den, Louis, E., Zoethout, E., Goldberg, K. A., and Bijkerk, F. Wed . "Characterization of Mo/Si multilayer growth on stepped topographies". United States. doi:10.1116/1.3628640. https://www.osti.gov/servlets/purl/1051628.
@article{osti_1051628,
title = {Characterization of Mo/Si multilayer growth on stepped topographies},
author = {Boogaard, A. J. R. vcan den and Louis, E. and Zoethout, E. and Goldberg, K. A. and Bijkerk, F.},
abstractNote = {Mo/Si multilayer mirrors with nanoscale bilayer thicknesses have been deposited on stepped substrate topographies, using various deposition angles. The multilayer morphology at the stepedge region was studied by cross section transmission electron microscopy. A transition from a continuous- to columnar layer morphology is observed near the step-edge, as a function of the local angle of incidence of the deposition flux. Taking into account the corresponding kinetics and anisotropy in layer growth, a continuum model has been developed to give a detailed description of the height profiles of the individual continuous layers. Complementary optical characterization of the multilayer system using a microscope operating in the extreme ultraviolet wavelength range, revealed that the influence of the step-edge on the planar multilayer structure is restricted to a region within 300 nm from the step-edge.},
doi = {10.1116/1.3628640},
journal = {Journal of vacuum science & technology. B, Microelectronics and nanometer structures},
issn = {1071-1023},
number = 5,
volume = 29,
place = {United States},
year = {2011},
month = {8}
}