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Title: Diffuse X-ray Streaks from Defects and Surface Features in Boron Implanted Silicon

Abstract

In a grazing incidence X-ray diffuse scattering investigation of boron implanted silicon we have discovered narrow intensity streaks along <111> directions. From a detailed analysis of three dimensional reciprocal space maps clear evidence is found that the rod-like scattering is due to extrinsic stacking faults with an average diameter of 71nm, formed in the implanted layer after rapid thermal annealing. At the same time nanometer sized features appear at the Si surface which are characterized by atomic force microscopy and specular reflectivity measurements.

Authors:
Publication Date:
Research Org.:
Stanford Linear Accelerator Center, Menlo Park, CA (US)
Sponsoring Org.:
USDOE Office of Energy Research (ER) (US)
OSTI Identifier:
10516
Report Number(s):
SLAC-PUB-8217
TRN: US0103578
DOE Contract Number:  
AC03-76SF00515
Resource Type:
Technical Report
Resource Relation:
Other Information: PBD: 13 Aug 1999
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; ATOMIC FORCE MICROSCOPY; BORON; DEFECTS; REFLECTIVITY; SCATTERING; SILICON; STACKING FAULTS; ION IMPLANTATION; SURFACE PROPERTIES

Citation Formats

Patel, Jamshed R. Diffuse X-ray Streaks from Defects and Surface Features in Boron Implanted Silicon. United States: N. p., 1999. Web. doi:10.2172/10516.
Patel, Jamshed R. Diffuse X-ray Streaks from Defects and Surface Features in Boron Implanted Silicon. United States. doi:10.2172/10516.
Patel, Jamshed R. Fri . "Diffuse X-ray Streaks from Defects and Surface Features in Boron Implanted Silicon". United States. doi:10.2172/10516. https://www.osti.gov/servlets/purl/10516.
@article{osti_10516,
title = {Diffuse X-ray Streaks from Defects and Surface Features in Boron Implanted Silicon},
author = {Patel, Jamshed R.},
abstractNote = {In a grazing incidence X-ray diffuse scattering investigation of boron implanted silicon we have discovered narrow intensity streaks along <111> directions. From a detailed analysis of three dimensional reciprocal space maps clear evidence is found that the rod-like scattering is due to extrinsic stacking faults with an average diameter of 71nm, formed in the implanted layer after rapid thermal annealing. At the same time nanometer sized features appear at the Si surface which are characterized by atomic force microscopy and specular reflectivity measurements.},
doi = {10.2172/10516},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {8}
}

Technical Report:

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