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Title: Sb[subscript 2]Te[subscript 3] and Bi[subscript 2]Te[subscript 3] Thin Films Grown by Room-Temperature MBE

Abstract

Sb{sub 2}Te3 and Bi{sub 2}Te3 thin films were grown on SiO{sub 2} and BaF{sub 2} substrates at room temperature using molecular beam epitaxy. Metallic layers with thicknesses of 0.2 nm were alternately deposited at room temperature, and the films were subsequently annealed at 250 C for 2 h. x-Ray diffraction and energy-filtered transmission electron microscopy (TEM) combined with high-accuracy energy-dispersive x-ray spectrometry revealed stoichiometric films, grain sizes of less than 500 nm, and a texture. High-quality in-plane thermoelectric properties were obtained for Sb{sub 2}Te3 films at room temperature, i.e., low charge carrier density (2.6 x 10{sup 19} cm{sup -3}, large thermopower (130 {micro}V K{sup -1}), large charge carrier mobility (402 cm{sup 2} V{sup -1} s{sup -1}), and resulting large power factor (29 {micro}W cm{sup -1} K{sup -2}). Bi{sub 2}Te3 films also showed low charge carrier density (2.7 x 10{sup 19} cm{sup -3}), moderate thermopower (-153 {micro}V K{sup -1}), but very low charge carrier mobility (80 cm{sup 2} V{sup -1} s{sup -1}), yielding low power factor (8 {micro}W cm{sup -1} K{sup -2}). The low mobilities were attributed to Bi-rich grain boundary phases identified by analytical energy-filtered TEM.

Authors:
; ; ; ; ; ; ;  [1];  [2];  [2]
  1. (Julich)
  2. (
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Org.:
FOREIGN
OSTI Identifier:
1051119
Resource Type:
Journal Article
Journal Name:
J. Electro. Mater.
Additional Journal Information:
Journal Volume: 41; Journal Issue: (6) ; 2012; Journal ID: ISSN 0361-5235
Country of Publication:
United States
Language:
ENGLISH
Subject:
36 MATERIALS SCIENCE; CHARGE CARRIERS; GRAIN SIZE; MOLECULAR BEAM EPITAXY; POWER FACTOR; SUBSTRATES; TEXTURE; THERMOELECTRIC PROPERTIES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; X-RAY SPECTROSCOPY

Citation Formats

Aabdin, Z., Peranio, N., Winkler, M., Bessas, D., König, J., Hermann, R.P., Böttner, H., Eibl, O., Tubingen), and Fraunhofer). Sb[subscript 2]Te[subscript 3] and Bi[subscript 2]Te[subscript 3] Thin Films Grown by Room-Temperature MBE. United States: N. p., 2012. Web. doi:10.1007/s11664-011-1870-z.
Aabdin, Z., Peranio, N., Winkler, M., Bessas, D., König, J., Hermann, R.P., Böttner, H., Eibl, O., Tubingen), & Fraunhofer). Sb[subscript 2]Te[subscript 3] and Bi[subscript 2]Te[subscript 3] Thin Films Grown by Room-Temperature MBE. United States. doi:10.1007/s11664-011-1870-z.
Aabdin, Z., Peranio, N., Winkler, M., Bessas, D., König, J., Hermann, R.P., Böttner, H., Eibl, O., Tubingen), and Fraunhofer). Tue . "Sb[subscript 2]Te[subscript 3] and Bi[subscript 2]Te[subscript 3] Thin Films Grown by Room-Temperature MBE". United States. doi:10.1007/s11664-011-1870-z.
@article{osti_1051119,
title = {Sb[subscript 2]Te[subscript 3] and Bi[subscript 2]Te[subscript 3] Thin Films Grown by Room-Temperature MBE},
author = {Aabdin, Z. and Peranio, N. and Winkler, M. and Bessas, D. and König, J. and Hermann, R.P. and Böttner, H. and Eibl, O. and Tubingen) and Fraunhofer)},
abstractNote = {Sb{sub 2}Te3 and Bi{sub 2}Te3 thin films were grown on SiO{sub 2} and BaF{sub 2} substrates at room temperature using molecular beam epitaxy. Metallic layers with thicknesses of 0.2 nm were alternately deposited at room temperature, and the films were subsequently annealed at 250 C for 2 h. x-Ray diffraction and energy-filtered transmission electron microscopy (TEM) combined with high-accuracy energy-dispersive x-ray spectrometry revealed stoichiometric films, grain sizes of less than 500 nm, and a texture. High-quality in-plane thermoelectric properties were obtained for Sb{sub 2}Te3 films at room temperature, i.e., low charge carrier density (2.6 x 10{sup 19} cm{sup -3}, large thermopower (130 {micro}V K{sup -1}), large charge carrier mobility (402 cm{sup 2} V{sup -1} s{sup -1}), and resulting large power factor (29 {micro}W cm{sup -1} K{sup -2}). Bi{sub 2}Te3 films also showed low charge carrier density (2.7 x 10{sup 19} cm{sup -3}), moderate thermopower (-153 {micro}V K{sup -1}), but very low charge carrier mobility (80 cm{sup 2} V{sup -1} s{sup -1}), yielding low power factor (8 {micro}W cm{sup -1} K{sup -2}). The low mobilities were attributed to Bi-rich grain boundary phases identified by analytical energy-filtered TEM.},
doi = {10.1007/s11664-011-1870-z},
journal = {J. Electro. Mater.},
issn = {0361-5235},
number = (6) ; 2012,
volume = 41,
place = {United States},
year = {2012},
month = {10}
}