A 55-kW Three-Phase Inverter with Si IGBTs and SiC Schottky Diodes

Title: A 55-kW Three-Phase Inverter with Si IGBTs and SiC Schottky Diodes

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Abstract

Silicon carbide (SiC) power devices are expected to have an impact on power converter efficiency, weight, volume, and reliability. Currently, only SiC Schottky diodes are commercially available at relatively low current ratings. Oak Ridge National Laboratory has collaborated with Cree and Semikron to build a Si insulated-gate bipolar transistor-SiC Schottky diode hybrid 55-kW inverter by replacing the Si p-n diodes in Semikron's automotive inverter with Cree's made-to-order higher current SiC Schottky diodes. This paper presents the developed models of these diodes for circuit simulators, shows inverter test results, and compares the results with those of a similar all-Si inverter.

Authors:

Tolbert, Leon M ^[1]; Ozpineci, Burak ^[1]; Chinthavali, Madhu Sudhan ^[1]; Mantooth, Homer A ^[1]; Kashyap, Avinash S ^[1]

ORNL

Publication Date:: 2009-01-01

Research Org.:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

OSTI Identifier:: 1050402

DOE Contract Number:: DE-AC05-00OR22725

Resource Type:: Journal Article

Journal Name:: IEEE Transactions on Industry Applications

Additional Journal Information:: Journal Volume: 45; Journal Issue: 1; Journal ID: ISSN 0093-9994

Country of Publication:: United States

Language:: English

Subject:: 99 GENERAL AND MISCELLANEOUS//MATHEMATICS, COMPUTING, AND INFORMATION SCIENCE; EFFICIENCY; INVERTERS; ORNL; RELIABILITY; SILICON CARBIDES; SIMULATORS

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                    Tolbert, Leon M, Ozpineci, Burak, Chinthavali, Madhu Sudhan, Mantooth, Homer A, and Kashyap, Avinash S. A 55-kW Three-Phase Inverter with Si IGBTs and SiC Schottky Diodes.  United States: N. p., 2009. 
        Web.

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                    Tolbert, Leon M, Ozpineci, Burak, Chinthavali, Madhu Sudhan, Mantooth, Homer A, & Kashyap, Avinash S. A 55-kW Three-Phase Inverter with Si IGBTs and SiC Schottky Diodes.  United States.

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                    Tolbert, Leon M, Ozpineci, Burak, Chinthavali, Madhu Sudhan, Mantooth, Homer A, and Kashyap, Avinash S. Thu .  
        "A 55-kW Three-Phase Inverter with Si IGBTs and SiC Schottky Diodes".  United States.

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@article{osti_1050402,

  title        = {A 55-kW Three-Phase Inverter with Si IGBTs and SiC Schottky Diodes},

  author       = {Tolbert, Leon M and Ozpineci, Burak and Chinthavali, Madhu Sudhan and Mantooth, Homer A and Kashyap, Avinash S},

  abstractNote = {Silicon carbide (SiC) power devices are expected to have an impact on power converter efficiency, weight, volume, and reliability. Currently, only SiC Schottky diodes are commercially available at relatively low current ratings. Oak Ridge National Laboratory has collaborated with Cree and Semikron to build a Si insulated-gate bipolar transistor-SiC Schottky diode hybrid 55-kW inverter by replacing the Si p-n diodes in Semikron's automotive inverter with Cree's made-to-order higher current SiC Schottky diodes. This paper presents the developed models of these diodes for circuit simulators, shows inverter test results, and compares the results with those of a similar all-Si inverter.},

  doi          = {},

  url          = {https://www.osti.gov/biblio/1050402},
  journal      = {IEEE Transactions on Industry Applications},

  issn         = {0093-9994},

  number       = 1,

  volume       = 45,

  place        = {United States},

  year         = {2009},

  month        = {1}

}

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