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Title: A 55-kW Three-Phase Inverter with Si IGBTs and SiC Schottky Diodes

Abstract

Silicon carbide (SiC) power devices are expected to have an impact on power converter efficiency, weight, volume, and reliability. Currently, only SiC Schottky diodes are commercially available at relatively low current ratings. Oak Ridge National Laboratory has collaborated with Cree and Semikron to build a Si insulated-gate bipolar transistor-SiC Schottky diode hybrid 55-kW inverter by replacing the Si p-n diodes in Semikron's automotive inverter with Cree's made-to-order higher current SiC Schottky diodes. This paper presents the developed models of these diodes for circuit simulators, shows inverter test results, and compares the results with those of a similar all-Si inverter.

Authors:
 [1];  [1];  [1];  [1];  [1]
  1. ORNL
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1050402
DOE Contract Number:  
DE-AC05-00OR22725
Resource Type:
Journal Article
Resource Relation:
Journal Name: IEEE Transactions on Industry Applications; Journal Volume: 45; Journal Issue: 1
Country of Publication:
United States
Language:
English
Subject:
99 GENERAL AND MISCELLANEOUS//MATHEMATICS, COMPUTING, AND INFORMATION SCIENCE; EFFICIENCY; INVERTERS; ORNL; RELIABILITY; SILICON CARBIDES; SIMULATORS

Citation Formats

Tolbert, Leon M, Ozpineci, Burak, Chinthavali, Madhu Sudhan, Mantooth, Homer A, and Kashyap, Avinash S. A 55-kW Three-Phase Inverter with Si IGBTs and SiC Schottky Diodes. United States: N. p., 2009. Web.
Tolbert, Leon M, Ozpineci, Burak, Chinthavali, Madhu Sudhan, Mantooth, Homer A, & Kashyap, Avinash S. A 55-kW Three-Phase Inverter with Si IGBTs and SiC Schottky Diodes. United States.
Tolbert, Leon M, Ozpineci, Burak, Chinthavali, Madhu Sudhan, Mantooth, Homer A, and Kashyap, Avinash S. Thu . "A 55-kW Three-Phase Inverter with Si IGBTs and SiC Schottky Diodes". United States.
@article{osti_1050402,
title = {A 55-kW Three-Phase Inverter with Si IGBTs and SiC Schottky Diodes},
author = {Tolbert, Leon M and Ozpineci, Burak and Chinthavali, Madhu Sudhan and Mantooth, Homer A and Kashyap, Avinash S},
abstractNote = {Silicon carbide (SiC) power devices are expected to have an impact on power converter efficiency, weight, volume, and reliability. Currently, only SiC Schottky diodes are commercially available at relatively low current ratings. Oak Ridge National Laboratory has collaborated with Cree and Semikron to build a Si insulated-gate bipolar transistor-SiC Schottky diode hybrid 55-kW inverter by replacing the Si p-n diodes in Semikron's automotive inverter with Cree's made-to-order higher current SiC Schottky diodes. This paper presents the developed models of these diodes for circuit simulators, shows inverter test results, and compares the results with those of a similar all-Si inverter.},
doi = {},
journal = {IEEE Transactions on Industry Applications},
number = 1,
volume = 45,
place = {United States},
year = {Thu Jan 01 00:00:00 EST 2009},
month = {Thu Jan 01 00:00:00 EST 2009}
}