van der Waals Epitaxy of MoS2 Layers Using Graphene As Growth Templates

doi:https://doi.org/10.1021/nl204562j

Title: van der Waals Epitaxy of MoS2 Layers Using Graphene As Growth Templates

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Abstract

We present a method for synthesizing MoS{sub 2}/Graphene hybrid heterostructures with a growth template of graphene-covered Cu foil. Compared to other recent reports, a much lower growth temperature of 400 C is required for this procedure. The chemical vapor deposition of MoS{sub 2} on the graphene surface gives rise to single crystalline hexagonal flakes with a typical lateral size ranging from several hundred nanometers to several micrometers. The precursor (ammonium thiomolybdate) together with solvent was transported to graphene surface by a carrier gas at room temperature, which was then followed by post annealing. At an elevated temperature, the precursor self-assembles to form MoS{sub 2} flakes epitaxially on the graphene surface via thermal decomposition. With higher amount of precursor delivered onto the graphene surface, a continuous MoS{sub 2} film on graphene can be obtained. This simple chemical vapor deposition method provides a unique approach for the synthesis of graphene heterostructures and surface functionalization of graphene. The synthesized two-dimensional MoS{sub 2}/Graphene hybrids possess great potential toward the development of new optical and electronic devices as well as a wide variety of newly synthesizable compounds for catalysts.

Authors:

Shi, Yumeng ^[1]; Zhou, Wu ^[2]; Lu, Ang-Yu ^[3]; Fang, Wenjing ^[1]; Lee, Yi-Hsien ^[1]; Hsu, Allen Long ^[1]; Kim, Soo Min ^[1]; Kim, Ki Kang ^[1]; Yang, Hui Ying ^[4]; Liang, Lain-Jong ^[3]; Idrobo Tapia, Juan C ^[5]; Kong, Jing ^[1]

Massachusetts Institute of Technology (MIT)
Vanderbilt University
Academia Sinica, Hefei, China
Singapore University of Technology and Design
ORNL

Publication Date:: 2012-01-01

Research Org.:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Shared Research Equipment Collaborative Research Center

Sponsoring Org.:: USDOE Office of Science (SC)

OSTI Identifier:: 1049932

DOE Contract Number:: DE-AC05-00OR22725

Resource Type:: Journal Article

Journal Name:: Nano Letters

Additional Journal Information:: Journal Volume: 12; Journal Issue: 6; Journal ID: ISSN 1530-6984

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; ANNEALING; CATALYSTS; CHEMICAL VAPOR DEPOSITION; EPITAXY; MOLYBDENUM; PRECURSOR; PYROLYSIS; SOLVENTS; SYNTHESIS; STEM; EELS; graphene; MoS2

Citation Formats


                    Shi, Yumeng, Zhou, Wu, Lu, Ang-Yu, Fang, Wenjing, Lee, Yi-Hsien, Hsu, Allen Long, Kim, Soo Min, Kim, Ki Kang, Yang, Hui Ying, Liang, Lain-Jong, Idrobo Tapia, Juan C, and Kong, Jing. van der Waals Epitaxy of MoS2 Layers Using Graphene As Growth Templates.  United States: N. p., 2012. 
        Web.  doi:10.1021/nl204562j.

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                    Shi, Yumeng, Zhou, Wu, Lu, Ang-Yu, Fang, Wenjing, Lee, Yi-Hsien, Hsu, Allen Long, Kim, Soo Min, Kim, Ki Kang, Yang, Hui Ying, Liang, Lain-Jong, Idrobo Tapia, Juan C, & Kong, Jing. van der Waals Epitaxy of MoS2 Layers Using Graphene As Growth Templates.  United States.  https://doi.org/10.1021/nl204562j

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                    Shi, Yumeng, Zhou, Wu, Lu, Ang-Yu, Fang, Wenjing, Lee, Yi-Hsien, Hsu, Allen Long, Kim, Soo Min, Kim, Ki Kang, Yang, Hui Ying, Liang, Lain-Jong, Idrobo Tapia, Juan C, and Kong, Jing. Sun .  
        "van der Waals Epitaxy of MoS2 Layers Using Graphene As Growth Templates".  United States.  https://doi.org/10.1021/nl204562j.

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@article{osti_1049932,

  title        = {van der Waals Epitaxy of MoS2 Layers Using Graphene As Growth Templates},

  author       = {Shi, Yumeng and Zhou, Wu and Lu, Ang-Yu and Fang, Wenjing and Lee, Yi-Hsien and Hsu, Allen Long and Kim, Soo Min and Kim, Ki Kang and Yang, Hui Ying and Liang, Lain-Jong and Idrobo Tapia, Juan C and Kong, Jing},

  abstractNote = {We present a method for synthesizing MoS{sub 2}/Graphene hybrid heterostructures with a growth template of graphene-covered Cu foil. Compared to other recent reports, a much lower growth temperature of 400 C is required for this procedure. The chemical vapor deposition of MoS{sub 2} on the graphene surface gives rise to single crystalline hexagonal flakes with a typical lateral size ranging from several hundred nanometers to several micrometers. The precursor (ammonium thiomolybdate) together with solvent was transported to graphene surface by a carrier gas at room temperature, which was then followed by post annealing. At an elevated temperature, the precursor self-assembles to form MoS{sub 2} flakes epitaxially on the graphene surface via thermal decomposition. With higher amount of precursor delivered onto the graphene surface, a continuous MoS{sub 2} film on graphene can be obtained. This simple chemical vapor deposition method provides a unique approach for the synthesis of graphene heterostructures and surface functionalization of graphene. The synthesized two-dimensional MoS{sub 2}/Graphene hybrids possess great potential toward the development of new optical and electronic devices as well as a wide variety of newly synthesizable compounds for catalysts.},

  doi          = {10.1021/nl204562j},

  url          = {https://www.osti.gov/biblio/1049932},
  journal      = {Nano Letters},

  issn         = {1530-6984},

  number       = 6,

  volume       = 12,

  place        = {United States},

  year         = {2012},

  month        = {1}

}

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