Scaling exponent within the side-jump mechanism of Hall effect size-dependence in Ni nanocrystals
Abstract
High-resolution Hall data in only 3.5 {micro}g of Ni nanocrystals, grown in a planar array on TiN, are reported. We conclude from the exponent, n-1.06 {+-} 0.01 in R{sub s}-{rho}{sup n}, where R{sub s} is the extraordinary Hall constant and {rho} is the Ohmic resistivity, that the side-jump mechanism could still be operative if the nanocrystals are below a certain critical size and the mean free path of the electrons is strongly temperature dependent only in the magnetic layer. Also, the 1000 times larger value of R{sub s} than those in bulk Ni makes it an ideal candidate for magnetic sensors.
- Authors:
-
- North Carolina Agricultural and Technical State University
- ORNL
- Publication Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1049160
- DOE Contract Number:
- DE-AC05-00OR22725
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 93; Journal Issue: 13; Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CRITICAL SIZE; ELECTRIC CONDUCTIVITY; ELECTRONS; FERROMAGNETIC MATERIALS; HALL EFFECT; MAGNETIZATION; MEAN FREE PATH; NICKEL; SENSORS
Citation Formats
Kumar, Dhananjay, Oh, Sang Ho, Pennycook, Stephen J, and Majumdar, A. K. Scaling exponent within the side-jump mechanism of Hall effect size-dependence in Ni nanocrystals. United States: N. p., 2008.
Web. doi:10.1063/1.2987517.
Kumar, Dhananjay, Oh, Sang Ho, Pennycook, Stephen J, & Majumdar, A. K. Scaling exponent within the side-jump mechanism of Hall effect size-dependence in Ni nanocrystals. United States. https://doi.org/10.1063/1.2987517
Kumar, Dhananjay, Oh, Sang Ho, Pennycook, Stephen J, and Majumdar, A. K. 2008.
"Scaling exponent within the side-jump mechanism of Hall effect size-dependence in Ni nanocrystals". United States. https://doi.org/10.1063/1.2987517.
@article{osti_1049160,
title = {Scaling exponent within the side-jump mechanism of Hall effect size-dependence in Ni nanocrystals},
author = {Kumar, Dhananjay and Oh, Sang Ho and Pennycook, Stephen J and Majumdar, A. K.},
abstractNote = {High-resolution Hall data in only 3.5 {micro}g of Ni nanocrystals, grown in a planar array on TiN, are reported. We conclude from the exponent, n-1.06 {+-} 0.01 in R{sub s}-{rho}{sup n}, where R{sub s} is the extraordinary Hall constant and {rho} is the Ohmic resistivity, that the side-jump mechanism could still be operative if the nanocrystals are below a certain critical size and the mean free path of the electrons is strongly temperature dependent only in the magnetic layer. Also, the 1000 times larger value of R{sub s} than those in bulk Ni makes it an ideal candidate for magnetic sensors.},
doi = {10.1063/1.2987517},
url = {https://www.osti.gov/biblio/1049160},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 13,
volume = 93,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 2008},
month = {Tue Jan 01 00:00:00 EST 2008}
}
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