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Title: Scaling exponent within the side-jump mechanism of Hall effect size-dependence in Ni nanocrystals

Abstract

High-resolution Hall data in only 3.5 {micro}g of Ni nanocrystals, grown in a planar array on TiN, are reported. We conclude from the exponent, n-1.06 {+-} 0.01 in R{sub s}-{rho}{sup n}, where R{sub s} is the extraordinary Hall constant and {rho} is the Ohmic resistivity, that the side-jump mechanism could still be operative if the nanocrystals are below a certain critical size and the mean free path of the electrons is strongly temperature dependent only in the magnetic layer. Also, the 1000 times larger value of R{sub s} than those in bulk Ni makes it an ideal candidate for magnetic sensors.

Authors:
 [1];  [1];  [2];  [1]
  1. North Carolina Agricultural and Technical State University
  2. ORNL
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1049160
DOE Contract Number:  
DE-AC05-00OR22725
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 93; Journal Issue: 13; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CRITICAL SIZE; ELECTRIC CONDUCTIVITY; ELECTRONS; FERROMAGNETIC MATERIALS; HALL EFFECT; MAGNETIZATION; MEAN FREE PATH; NICKEL; SENSORS

Citation Formats

Kumar, Dhananjay, Oh, Sang Ho, Pennycook, Stephen J, and Majumdar, A. K. Scaling exponent within the side-jump mechanism of Hall effect size-dependence in Ni nanocrystals. United States: N. p., 2008. Web. doi:10.1063/1.2987517.
Kumar, Dhananjay, Oh, Sang Ho, Pennycook, Stephen J, & Majumdar, A. K. Scaling exponent within the side-jump mechanism of Hall effect size-dependence in Ni nanocrystals. United States. https://doi.org/10.1063/1.2987517
Kumar, Dhananjay, Oh, Sang Ho, Pennycook, Stephen J, and Majumdar, A. K. 2008. "Scaling exponent within the side-jump mechanism of Hall effect size-dependence in Ni nanocrystals". United States. https://doi.org/10.1063/1.2987517.
@article{osti_1049160,
title = {Scaling exponent within the side-jump mechanism of Hall effect size-dependence in Ni nanocrystals},
author = {Kumar, Dhananjay and Oh, Sang Ho and Pennycook, Stephen J and Majumdar, A. K.},
abstractNote = {High-resolution Hall data in only 3.5 {micro}g of Ni nanocrystals, grown in a planar array on TiN, are reported. We conclude from the exponent, n-1.06 {+-} 0.01 in R{sub s}-{rho}{sup n}, where R{sub s} is the extraordinary Hall constant and {rho} is the Ohmic resistivity, that the side-jump mechanism could still be operative if the nanocrystals are below a certain critical size and the mean free path of the electrons is strongly temperature dependent only in the magnetic layer. Also, the 1000 times larger value of R{sub s} than those in bulk Ni makes it an ideal candidate for magnetic sensors.},
doi = {10.1063/1.2987517},
url = {https://www.osti.gov/biblio/1049160}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 13,
volume = 93,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 2008},
month = {Tue Jan 01 00:00:00 EST 2008}
}