skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Carrier Density and Compensation in Semiconductors with Multi Dopants and Multi Transition Energy Levels: The Case of Cu Impurity in CdTe

Abstract

Doping is one of the most important issues in semiconductor physics. The charge carrier generated by doping can profoundly change the properties of semiconductors and their performance in optoelectronic device applications, such as solar cells. Using detailed balance theory and first-principles calculated defect formation energies and transition energy levels, we derive general formulae to calculate carrier density for semiconductors with multi dopants and multi transition energy levels. As an example, we studied CdTe doped with Cu, in which V{sub Cd}, Cu{sub Cd}, and Cu{sub i} are the dominant defects/impurities. We show that in this system, when Cu concentration increases, the doping properties of the system can change from a poor p-type, to a poorer p-type, to a better p-type, and then to a poor p-type again, in good agreement with experimental observation of CdTe-based solar cells.

Authors:
; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy Solar Energy Technologies Program
OSTI Identifier:
1048594
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Conference
Resource Relation:
Conference: [Proceedings] 37th IEEE Photovoltaic Specialists Conference (PVSC '11), 19-24 June 2011, Seattle, Washington; Related Information: See NREL/CP-5200-50683 for preprint
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; CARRIER DENSITY; CHARGE CARRIERS; DEFECTS; ENERGY LEVELS; PERFORMANCE; PHYSICS; SOLAR CELLS; Chemical and Material Sciences; Solar Energy - Photovoltaics

Citation Formats

Wei, S H, Ma, J, Gessert, T A, and Chin, K K. Carrier Density and Compensation in Semiconductors with Multi Dopants and Multi Transition Energy Levels: The Case of Cu Impurity in CdTe. United States: N. p., 2011. Web. doi:10.1109/pvsc.2011.6186535.
Wei, S H, Ma, J, Gessert, T A, & Chin, K K. Carrier Density and Compensation in Semiconductors with Multi Dopants and Multi Transition Energy Levels: The Case of Cu Impurity in CdTe. United States. https://doi.org/10.1109/pvsc.2011.6186535
Wei, S H, Ma, J, Gessert, T A, and Chin, K K. Sat . "Carrier Density and Compensation in Semiconductors with Multi Dopants and Multi Transition Energy Levels: The Case of Cu Impurity in CdTe". United States. https://doi.org/10.1109/pvsc.2011.6186535.
@article{osti_1048594,
title = {Carrier Density and Compensation in Semiconductors with Multi Dopants and Multi Transition Energy Levels: The Case of Cu Impurity in CdTe},
author = {Wei, S H and Ma, J and Gessert, T A and Chin, K K},
abstractNote = {Doping is one of the most important issues in semiconductor physics. The charge carrier generated by doping can profoundly change the properties of semiconductors and their performance in optoelectronic device applications, such as solar cells. Using detailed balance theory and first-principles calculated defect formation energies and transition energy levels, we derive general formulae to calculate carrier density for semiconductors with multi dopants and multi transition energy levels. As an example, we studied CdTe doped with Cu, in which V{sub Cd}, Cu{sub Cd}, and Cu{sub i} are the dominant defects/impurities. We show that in this system, when Cu concentration increases, the doping properties of the system can change from a poor p-type, to a poorer p-type, to a better p-type, and then to a poor p-type again, in good agreement with experimental observation of CdTe-based solar cells.},
doi = {10.1109/pvsc.2011.6186535},
url = {https://www.osti.gov/biblio/1048594}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2011},
month = {1}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share: