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Title: Atomically Abrupt Liquid-Oxide Interface Stabilized by Self-Regulated Interfacial Defects: The Case of Al/Al2O3 Interfaces

Journal Article · · Physical Review Letters

The atomic and electronic structures of the liquid Al/(0001) {alpha}-Al{sub 2}O{sub 3} interfaces are investigated by first-principles molecular dynamics simulations. Surprisingly, the formed liquid-solid interface is always atomically abrupt and is characterized by a transitional Al layer that contains a fixed concentration of Al vacancies ({approx}10 at.%). We find that the self-regulation of the defect density in the metal layer is due to the fact that the formation energy of the Al vacancies is readjusted in a way that opposes changes in the defect density. The negative-feedback effect stabilizes the defected transitional layer and maintains the atomic abruptness at the interface. The proposed mechanism is generally applicable to other liquid-metal/metal-oxide systems, and thus of significant importance in understanding the interface structures at high temperature.

Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
DOE Contract Number:
AC36-08GO28308
OSTI ID:
1045062
Report Number(s):
NREL/JA-5900-53769; PRLTAO; TRN: US201214%%894
Journal Information:
Physical Review Letters, Vol. 108, Issue 22; Related Information: Article No. 226105; ISSN 0031-9007
Country of Publication:
United States
Language:
English

References (21)

Embedded Binary Eutectic Alloy Nanostructures: A New Class of Phase Change Materials journal August 2010
Enhancing Heat Capacity of Colloidal Suspension Using Nanoscale Encapsulated Phase-Change Materials for Heat Transfer journal May 2010
Large Melting-Point Hysteresis of Ge Nanocrystals Embedded in SiO 2 journal October 2006
Effects of confinement on freezing and melting journal January 2006
Determination of pressure effect on the melting point elevation of Al nanoparticles encapsulated in Al 2 O 3 without epitaxial interface journal September 2004
Size-dependent melting behavior of Zn nanowire arrays journal April 2006
Surface Layering in Liquid Gallium: An X-Ray Reflectivity Study journal September 1995
Layering of a liquid metal in contact with a hard wall journal November 1997
Ordered Liquid Aluminum at the Interface with Sapphire journal October 2005
Direct Calculation of the Hard-Sphere Crystal / Melt Interfacial Free Energy journal November 2000
Oscillatory Mass Transport in Vapor-Liquid-Solid Growth of Sapphire Nanowires journal October 2010
Generalized Gradient Approximation Made Simple journal October 1996
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set journal October 1996
Projector augmented-wave method journal December 1994
From ultrasoft pseudopotentials to the projector augmented-wave method journal January 1999
A unified formulation of the constant temperature molecular dynamics methods journal July 1984
Half-Solidity of Tetrahedral-like Al 55 Clusters journal January 2010
Origin of the Diverse Melting Behaviors of Intermediate-Size Nanoclusters: Theoretical Study of Al N ( N = 51−58, 64) journal December 2010
Adhesion, atomic structure, and bonding at the Al ( 111 ) / α Al 2 O 3 ( 0001 ) interface: A first principles study journal February 2002
First-principles calculations of intrinsic defects in Al 2 O 3 journal August 2003
Oxygen induced interfacial phenomena during wetting of alumina by liquid aluminium journal January 2002